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arXiv · 1507.06138

Room temperature write-read operations in antiferromagnetic memory

Takahiro Moriyama·Noriko Matsuzaki·Kab-Jin Kim·Ippei Suzuki·Tomoyasu Taniyama·Teruo Ono
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Abstract

B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the N\'eel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only. Our demonstration of writing and reading at ambient room temperature opens a realistic pathway towards operational antiferromagnetic memory devices.

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Takahiro Moriyama, Noriko Matsuzaki, Kab-Jin Kim, Ippei Suzuki, Tomoyasu Taniyama, Teruo Ono. 2015-07-22. Room temperature write-read operations in antiferromagnetic memory. https://doi.org/10.1063/1.4931567

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