SOI Pixel Sensor for Gamma-Ray Imaging

Kenji Shimazoe; Fairuz Atiqah; Yuri Yoshihara; Akihiko Koyama; Hiroyuki Takahashi; Tadashi Orita; Kei Kamada; Ayaki Takeda; Takeshi Tsuru; Yasuo Arai

arXiv · 1507.06743

SOI Pixel Sensor for Gamma-Ray Imaging

Kenji Shimazoe·Fairuz Atiqah·Yuri Yoshihara·Akihiko Koyama·Hiroyuki Takahashi·Tadashi Orita·Kei Kamada·Ayaki Takeda·Takeshi Tsuru·Yasuo Arai

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Abstract

SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor has also been developed for the application of X-ray astronomy with the purpose of reducing the noise using anti-coincidence event. This trigger mode SOI pixel sensor working with in the rate of kilo Hz is also a promising scatter detector for advanced Compton imaging to track the Compton recoiled electrons.

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Kenji Shimazoe, Fairuz Atiqah, Yuri Yoshihara, Akihiko Koyama, Hiroyuki Takahashi, Tadashi Orita, Kei Kamada, Ayaki Takeda, Takeshi Tsuru, Yasuo Arai. 2015-07-24. SOI Pixel Sensor for Gamma-Ray Imaging. https://arxiv.org/abs/1507.06743

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