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arXiv · 1508.04075

Silicon Superconducting Quantum Interference Device

Jean-Eudes Duvauchelle·Anaïs Francheteau·Christophe Marcenat·Francesca Chiodi·Dominique Débarre·Klaus Hasselbach·John R. Kirtley·François Lefloch
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Abstract

We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

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Jean-Eudes Duvauchelle, Anaïs Francheteau, Christophe Marcenat, Francesca Chiodi, Dominique Débarre, Klaus Hasselbach, John R. Kirtley, François Lefloch. 2015-08-17. Silicon Superconducting Quantum Interference Device. https://doi.org/10.1063/1.4928660

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