arXiv · 1508.06318
Net on-chip Brillouin gain based on suspended silicon nanowires
Abstract
The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to $10^{4} \, \text{W}^{-1}\text{m}^{-1}$, the highest to date in the phononic gigahertz range. We also find indications that geometric disorder poses a significant challenge towards nanoscale phonon-based technologies.
Explore related subjects
Keep this discovery
Raphaël Van Laer, Alexandre Bazin, Bart Kuyken, Roel Baets, Dries Van Thourhout. 2015-08-25. Net on-chip Brillouin gain based on suspended silicon nanowires. https://doi.org/10.1088/1367-2630%2F17%2F11%2F115005
Cite the original work for its findings. Save a collection to share your selection of sources.