arXiv subjects

Bart Kuyken

Publications and source records attributed to Bart Kuyken.

At least 19 recordsLinked to original sources

arXiv2026

Micro-transfer Printed Blue InGaN Lasers on Silicon Nitride Photonic Integrated Circuits

Expanding integrated photonics into the blue spectral range requires high-performance light sources, making the gallium nitride (GaN) material family indispensable. While silicon nitride (SiN) platforms offer a robust, CMOS compatible passive ecosystem for visible wavelengths, seamlessly integrating GaN lasers remains a major bottleneck. Conventional heterogeneous integration methods present distinct trade-offs: full-wafer bonding achieves high throughput but requires careful management of thermal and lattice mismatches across large areas, whereas flip-chip bonding ensures high yield through pretesting but is constrained by sequential processing speed. In this landscape, micro-transfer printing (MTP) emerges as a disruptive, material-efficient alternative, bypassing these limitations by combining high-density parallel integration with known-good-die selection. Applying MTP to GaN, however, presents a significant material challenge: due to its chemical inertness and strong III-N bonds, device release typically relies on electrochemical etching, which can compromise material quality. Here, we overcome this hurdle and demonstrate the first micro-transfer printed blue lasers on a SiN platform. Using a heavily doped n-type sacrificial layer together with optimized electrochemical etching conditions, we release smooth-surfaced thin-film light sources from bulk GaN substrates. Following release, the devices are integrated and butt-coupled to SiN fork-shaped edge couplers, achieving high current densities exceeding 20 kA$/$cm$^2$ alongside lasing at 455 nm. These results expand the visible integrated photonic toolkit and establish a framework for multi-wavelength integration, opening new avenues for next-generation technologies including flow cytometry, quantum computing, optical communications, and augmented/virtual reality.

physics.optics↗

arXiv2026

Heterogeneously Integrated Efficient and Widely Tunable Lasers at 795 nm for Rubidium-Based Quantum Technologies

Scaling quantum processors and optical atomic clocks fundamentally requires orders-of-magnitude reductions in the size, weight, power, and cost of optical control systems. Photonic integration of lasers is critical to fulfill these requirements. At the near-infrared wavelengths required for atomic clocks and quantum computing through manipulation of rubidium atoms, laser integration is hindered by difficulty in light coupling and poor heat dissipation. Here, we introduce a wafer-scalable method utilizing micro-transfer printing to integrate GaAs-based amplifiers in etched recesses, directly butt-coupled to silicon nitride waveguides. We demonstrate extended-cavity single-mode lasers using this integration approach. Our compact microgear laser achieves a narrow 3 kHz fundamental linewidth at an on-chip output power of >22 mW -- a record for a single-mode heterogeneously integrated laser in the 780-800 nm band -- with a wall-plug efficiency of 9.4%, showcasing the high-power and efficiency potential of this integration approach. Additionally, we demonstrate a widely tunable laser leveraging Vernier filters to achieve lasing with 9 nm coarse tuning, a quasi-continuous fine-tuning range exceeding 140 GHz, and a mode-hop-free tuning range of 45 GHz. Our scalable integrated laser toolkit shows great promise for replacing macroscopic external-cavity diode lasers in next-generation quantum technologies and optical atomic clocks.

physics.optics↗

arXiv2026

A Heterogeneous 200 mm Silicon Nitride Photonics Platform for Visible-to-Near-Infrared Applications via Micro-Transfer Printing

The commercialization of next-generation technologies, including optical interconnects, quantum computing, AR/VR, and medical diagnostics, requires a low-loss photonic platform offering compact, multifunctional systems in the visible and near-infrared range. Although silicon nitride (SiN) is an excellent material due to its ultra-low loss and broad transparency window, integrating active components such as light sources, modulators and photodetectors from diverse material platforms in a scalable, reliable way remains challenging. Micro-transfer printing is an emerging wafer-scale heterogeneous integration technology that can be implemented as a back-end post-processing step without disrupting the primary in-line fabrication process. In this work, we present a dual LPCVD SiN layer platform fabricated in a 200 mm CMOS pilot line, that incorporates micro-transfer printing modules, allowing the integration of active components on well defined recesses. A hydrogenated amorphous silicon layer is also available to increase the versatility of the platform allowing for evanescently-coupled III-V lasers as well as other passive functionality in the near-infrared region. We report full wafer-scale measurements showing low optical SiN losses of 4 dB/cm and 0.23 dB/cm at a wavelength of 488 nm and 940 nm respectively. In addition, a transition loss of only 0.35 dB is obtained from the SiN to the a-Si:H layer, in good agreement with simulated values. Finally, to showcase more advanced functionality, GaAs-based gain sections are micro-transfer printed on several dies, achieving consistent die-to-die lasing at 970 nm with on-chip optical powers of approximately 1 mW. These results showcase the potential of the integrated photonics platform towards unlocking a wide range of new applications in the sub-1-$μ$m spectral region.

physics.optics↗

arXiv2026

Micro-Transfer Printing of Lithium Niobate on 200 mm Silicon Photonics: A High-Speed Heterogeneous Wafer-Scale Platform

The rapid growth of artificial intelligence (AI) and other data center applications is driving the demand for photonic interconnects that combine high-speed with low energy consumption, making scalability a critical requirement. Micro-transfer printing (MTP) has emerged as a promising technique for the wafer-scale heterogeneous integration of thin film lithium niobate (TFLN) onto silicon photonics (SiPho) platforms. Here, we demonstrate heterogeneous SiPho TFLN integration across four full 200 mm wafers with a 3sigma placement accuracy down to 420 nm and a printing yield of larger than 95percentage. Low insertion loss less than 2 dB over 600 phase modulators (300 amplitude modulators) is achieved. A half wave voltage of 4 V in push pull configuration, and high-speed modulation with a bandwith larger than 70 GHz is demonstrated on a subset of tested devices.

physics.optics↗

arXiv2026

A variability-aware simulation and design workflow for wafer-scale, heterogeneously integrated lithium niobate modulators

We present a variability-aware simulation framework for heterogeneously integrated lithium niobate traveling-wave modulators. The framework incorporates fabrication-variation data obtained from our dedicated pilot line and enables efficient optimisation of geometric parameters to ensure stable device performance across wafer-scale manufacturing. The proposed multi-parameter optimisation method enables the efficient identification of modulator designs that simultaneously achieve target performance metrics (Vpi, optical insertion loss, and 3dB electro-optic bandwidth) while maintaining robustness against fabrication-induced variations. Using this methodology on two representative modulator architectures, we theoretically demonstrate that reliable wafer-scale integration of lithium niobate modulators on silicon photonics via micro-transfer printing is feasible and can be systematically engineered.

physics.optics↗

arXiv2026

Thin-film lithium tantalate for ultraviolet integrated electro-optic modulator

The realization of integrated, high-speed ultraviolet (UV) modulation is pivotal for the advancement of quantum information processing, portable atomic clocks, and secure solar-blind communications. While mature photonic platforms have facilitated sophisticated system-level integration across visible and infrared spectra, high-speed active modulation in UV remains with traditional bulk crystals. Consequently, a scalable integrated solution that simultaneously combines low insertion loss and extreme compactness with high modulation efficiency has remained challenging. Here, we report the first integrated UV electro-optic modulator on a thin-film lithium tantalate (TFLT) platform. By employing a compact lumped-electrode design, we achieve a record-low VπL of 85 mV\cdot cm at 375 nm, providing an up to four orders of magnitude improvement in terms of bandwidth/Vπ L over bulk technologies. The device demonstrates a robust extinction ratio of 22.7 dB, a low insertion loss of 1.3 dB, and a Vπ of 4.2V. Although the measured 3-dB bandwidth of 922 MHz is currently limited by photodetector performance, the small device footprint of 1.16 mm and electrode design of 200 μm indicate intrinsic potential for high-speed operation beyond 67 GHz which is confirmed by the electrical-to-electrical response. This work establishes TFLT as a disruptive platform for wafer-scale compatible active UV photonics, enabling the next generation of scalable quantum and communication systems.

physics.optics↗

arXiv2026

Toward nanophotonic platforms for solid-state $^{229}$Th nuclear clocks

While the $^{229}$Th nuclear isomer has recently been observed and laser-excited, converting optical nuclear manipulation into a chip-scale solid-state frequency standard remains an open challenge. Here, we present a nanophotonic platform to realize an all-solid-state nuclear clock based on the low-energy isomeric transition of $^{229}$Th embedded in high-$Q$ fluoride photonic resonators. By coupling ensembles of thorium nuclei to confined optical modes, we show that resonant field build-up in the cavity can substantially enhance the nuclear excitation rate, enabling optical interrogation at practical laser intensities. We model the nuclei-photon interaction dynamics and outline a technological roadmap toward addressing this challenge, including resonator fabrication in fluoride crystals, thorium implantation, nuclear excitation with integrated lasers, and on-chip detection of vacuum-ultraviolet photons. As an initial proof of concept, we implant a crystalline fluoride whispering-gallery-mode resonator with $^{229}$Th and assess the impact of implantation-induced damage on resonator performance. Our platform leverages recent advances in materials integration and nanophotonics to chart a realistic route toward compact and scalable nuclear frequency standards.

physics.optics↗

arXiv2025

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Next-generation scalable quantum photonic technologies operating at the single photon level rely on bringing together optimized quantum building blocks with minimal optical coupling losses. Achieving this necessitates the heterogeneous integration of different elements onto a single interposer chip. Integrated quantum emitters are key enablers for generating single photons, inducing quantum nonlinearities, and producing entanglement. In this work, we demonstrate the scalable integration of mature InGaAs quantum dots embedded in GaAs waveguides onto a low-loss SiN photonic platform, as evidenced by a high processing yield of 94.7% using a commercially available micro-transfer printing tool. These integrated emitters are embedded within a p-i-n heterostructure that allows for noise suppression, near-blinking-free operation and wavelength tunability upon CMOS-level electrical biasing. With this, we pave the way for scalable integration of diverse quantum photonic devices on a single chip.

physics.optics↗

arXiv2025

Micro-Transfer Printed Continuous-Wave and Mode-Locked Laser Integration at 800 nm on a Silicon Nitride Platform

Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of III-V optical gain materials with low-loss silicon nitride waveguides enables complex photonic circuits with low-noise lasers on a single chip. Previous such demonstrations are mostly geared towards telecommunication wavelengths. At shorter wavelengths, limited options exist for efficient light coupling between III-V and silicon nitride waveguides. Recent advances in wafer-bonded devices at these wavelengths require complex coupling structures and suffer from poor heat dissipation. Here, we overcome these challenges and demonstrate a wafer-scale micro-transfer printing method integrating functional III-V devices directly onto the silicon substrate of a commercial silicon nitride platform. We show butt-coupling of efficient GaAs-based amplifiers operating at 800 nm with integrated saturable absorbers to silicon nitride cavities. This resulted in extended-cavity continuous-wave and mode-locked lasers generating pulse trains with repetition rates ranging from 3.2 to 9.2 GHz and excellent passive stability with a fundamental radio-frequency linewidth of 519 Hz. These results show the potential to build complex, high-performance fully-integrated laser systems at 800 nm using scalable manufacturing, promising advances for AR/VR, nonlinear photonics, timekeeping, quantum computing, and beyond.

physics.optics↗

arXiv2025

A high-speed heterogeneous lithium tantalate silicon photonics platform

The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic components onto a single chip, enhancing the performance of optical transceivers. Here, silicon photonics, benefiting from mature fabrication processes, has gained prominence. The platform combines modulators, switches, photodetectors and low-loss waveguides on a single chip. However, emerging standards like 1600ZR+ potentially exceed the capabilities of silicon-based modulators. To address these limitations, thin-film lithium niobate has been proposed as an alternative to silicon photonics, offering a low voltage-length product and exceptional high-speed modulation properties. More recently, the first demonstrations of thin-film lithium tantalate circuits have emerged, addressing some of the disadvantages of lithium niobate enabling a reduced bias drift and enhanced resistance to optical damage. As such, making it a promising candidate for next-generation photonic platforms. However, a persistent drawback of such platforms is the lithium contamination, which complicates integration with CMOS fabrication processes. Here, we present for the first time the integration of lithium tantalate onto a silicon photonics chip. This integration is achieved without modifying the standard silicon photonics process design kit. Our device achieves low half-wave voltage (3.5 V), low insertion loss (2.9 dB) and high-speed operation (> 70 GHz), paving the way for next-gen applications. By minimising lithium tantalate material use, our approach reduces costs while leveraging existing silicon photonics technology advancements, in particular supporting ultra-fast monolithic germanium photodetectors and established process design kits.

physics.optics↗

arXiv2025

A scalable quadratic nonlinear silicon photonics platform with printable entangled photon-pair sources

The integration of second-order optical nonlinearities into scalable photonic platforms remains a key challenge due to their large sensitivity to fabrication variations. Here, we present a scalable quadratic nonlinear platform that harnesses the maturity and scalability of existing CMOS processes by heterogeneously integrating periodically poled lithium niobate (PPLN) onto a silicon photonics platform. A generic PPLN design enables frequency conversion on two distinct waveguide geometries with efficiencies comparable to LNOI rib waveguides. We achieve reproducible phase-matching across the full radius of a commercial 200 mm silicon photonics wafer, leveraging superior CMOS fabrication tolerances. Furthermore, we introduce a tuning mechanism for both blue- and red-shifting of the operating wavelength, fully compensating fabrication-induced offsets. This enables deterministic phase-matching over an entire wafer and yields a strategy for wafer-scale phase-matched quadratic nonlinearities. Finally, we realize printable photon-pair sources via spontaneous parametric down-conversion, highlighting the platform's potential for large-scale quantum optical circuits. These results pave the way for wafer-scale integration of second-order optical nonlinearities in large photonic systems.

physics.optics↗

arXiv2025

Engineering high Pockels coefficients in thin-film strontium titanate for cryogenic quantum electro-optic applications

Materials which exhibit the Pockels effect are notable for their strong electro-optic interaction and rapid response times and are therefore used extensively in classical electro-optic components for data and telecommunication applications. Yet many materials optimized for room-temperature operation see their Pockels coefficients at cryogenic temperatures significantly reduced - a major hurdle for emerging quantum technologies which have even more rigorous demands than their classical counterpart. A noted example is $\mathrm{BaTiO_3}$, which features the strongest effective Pockels coefficient at room temperature, only to see it reduced to a third (i.e. $\mathrm{r_{eff}} \approx$ 170 pm/V) at a few Kelvin. Here, we show that this behaviour is not inherent and can even be reversed: Strontium titanate ($\mathrm{SrTiO_3}$), a material normally not featuring a Pockels coefficient, can be engineered to exhibit an $\mathrm{r_{eff}}$ of 345 pm/V at cryogenic temperatures - a record value in any thin-film electro-optic material. By adjusting the stoichiometry, we can increase the Curie temperature and realise a ferroelectric phase that yields a high Pockels coefficient, yet with limited optical losses - on the order of decibels per centimetre. Our findings position $\mathrm{SrTiO_3}$ as one of the most promising materials for cryogenic quantum photonics applications.

physics.optics↗

arXiv2025

Centimetre-Scale Micro-Transfer Printing to enable Heterogeneous Integration of Thin Film Lithium Niobate with Silicon Photonics

The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but is limited by its lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity. In this paper, we demonstrate the integration of centimetre-long thin-film lithium niobate (TFLN) devices on a SiN platform using the micro-transfer printing (uTP) method. At a wavelength of 1550 nm, propagation losses of approximately 0.9 dB/cm and transition losses of 1.8 dB per facet were measured. Furthermore, the TFLN was integrated into an imbalanced push-pull Mach-Zehnder modulator, achieving a Vπ of 3.2 V. The electro-optics nature of the observed modulation is confirmed by measuring the device up to 35 GHz, showing that the printing does not affect the high-speed LN properties.

physics.optics↗

arXiv2024

Integrated resonant electro-optic comb enabled by platform-agnostic laser integration

The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands for ultra-low optical loss, wider bandgaps, and optical nonlinearities necessitate other platforms. Developing integrated lasers on less mature platforms is arduous and costly due to limited throughput or unconventional process requirements. In response, we propose a novel platform-agnostic laser integration technique utilizing a singular design and process flow, applicable without modification to a diverse range of platforms. Leveraging a two-step micro-transfer printing method, we achieve nearly identical laser performance across platforms with refractive indices between 1.7 and 2.5. Experimental validation demonstrates strikingly similar laser characteristics between devices processed on lithium niobate and silicon nitride platforms. Furthermore, we showcase the integration of a laser with a resonant electro-optic comb generator on the thin-film lithium niobate platform, producing over 80 comb lines spanning 12 nm. This versatile technique transcends platform-specific limitations, facilitating applications like microwave photonics, handheld spectrometers, and cost-effective Lidar systems, across multiple platforms.

physics.optics↗

arXiv2023

Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator

Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps.

physics.optics↗

arXiv2023

Reliable micro-transfer printing method for heterogeneous integration of lithium niobate and semiconductor thin films

High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer yield. We present a new source preparation method that enables reliable transfer printing of thin-film lithium niobate. We demonstrate its versatility by successfully applying it to gallium phosphide and silicon, and provide an estimate of the transfer yield by subsequently printing 25 lithium niobate films without fail.

physics.optics↗

arXiv2021

Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity

Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity the performance can be increased considerably. In this paper, we demonstrate for the first time that a high-performance mode-locked laser can be achieved with a butt-coupling integration technique using chip scale silicon nitride waveguides. A platform-independent SiN/SU8 coupler design is used to couple between the silicon nitride external cavity and the III/V active chip. Mode-locked lasers at 2.18 GHz and 15.5 GHz repetition rates are demonstrated with Lorentzian RF linewidths several orders of magnitude smaller than what has been demonstrated on monolithic InP platforms. The RF linewidth was 31 Hz for the 2.18 GHz laser.

physics.optics↗

arXiv2020

Efficient Type II Second Harmonic Generation in an Indium Gallium Phosphide on insulator wire waveguide aligned with a crystallographic axis

We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12 %/W, limited by the propagation loss.

physics.optics↗