Scalable T^2 resistivity in a small single-component Fermi surface

Xiao Lin; Benoit Fauque; Kamran Behnia

doi:10.1126/science.aaa8655

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arXiv · 1508.07812

Scalable T^2 resistivity in a small single-component Fermi surface

Xiao Lin·Benoit Fauque·Kamran Behnia

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Abstract

Scattering among electrons generates a distinct contribution to electrical resistivity that follows a quadratic temperature dependence. In strongly-correlated electron systems, the prefactor A of this T$^2$ resistivity scales with the magnitude of the electronic specific heat. Here, we show that one can change the magnitude of A by four orders of magnitude in metallic SrTiO3 by tuning the concentration of the carriers and consequently, the Fermi energy. The T$^2$ behavior persists in the single-band dilute limit despite the absence of two known mechanisms for T$^2$ behavior, distinct electron reservoirs and Umklapp processes. The results highlight the absence of a microscopic theory for momentum decay through electron-electron scattering in different Fermi liquids.

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Xiao Lin, Benoit Fauque, Kamran Behnia. 2015-08-31. Scalable T^2 resistivity in a small single-component Fermi surface. https://doi.org/10.1126/science.aaa8655

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