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arXiv · 1509.01025

Going Ballistic: Graphene Hot Electron Transistors

Sam Vaziri·Anderson D. Smith·Mikael Östling·Grzegorz Lupina·Jarek Dabrowski·Gunther Lippert·Francesco Driussi·Stefano Venica·Valerio Di Lecce·Antonio Gnudi·Matthias König·Günther Ruhl·Melkamu Belete·Max C. Lemme
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Abstract

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

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Sam Vaziri, Anderson D. Smith, Mikael Östling, Grzegorz Lupina, Jarek Dabrowski, Gunther Lippert, Francesco Driussi, Stefano Venica, Valerio Di Lecce, Antonio Gnudi, Matthias König, Günther Ruhl, Melkamu Belete, Max C. Lemme. 2015-09-03. Going Ballistic: Graphene Hot Electron Transistors. https://doi.org/10.1016/j.ssc.2015.08.012

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