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arXiv · 1509.06545

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Paweł Puczkarski·Pascal Gehring·Chit S. Lau·Junjie Liu·Arzhang Ardavan·Jamie H. Warner·G. Andrew D. Briggs·Jan A. Mol
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Abstract

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

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Paweł Puczkarski, Pascal Gehring, Chit S. Lau, Junjie Liu, Arzhang Ardavan, Jamie H. Warner, G. Andrew D. Briggs, Jan A. Mol. 2015-09-22. Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning. https://doi.org/10.1063/1.4932133

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