SearcharxivSearch

arXiv subjects

Jamie H. Warner

Publications and source records attributed to Jamie H. Warner.

16 recordsLinked to original sources

Quantum sensor in a single layer van der Waals material

Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new horizons for sensing in the subnanometer scales in 2D heterostructures. However, controlled creation of quantum sensor in a single layer 2D materials with high sensitivity has been elusive so far. Here, we report on a novel 2D quantum sensor, the VB2 centre in hexagonal boron nitride (hBN), with superior sensing capabilities. The centre's inherently low symmetry configuration gives rise to unique electronic and spin properties that implement a qubit in a 2D material with unprecedented sensitivity. The qubit is decoupled from its dense spin environment at low magnetic fields that gives rise to the reduction of the spin resonance linewidth and elongation of the coherence time. The VB2 centre is also equipped with a classical memory that can be utilized in storing population information. Using scanning transmission electron microscopy imaging, we confirm the presence of the point defect structure in free standing monolayer hBN created by electron beam irradiation. Our results provide a new material solution towards atomic-scale sensing in low dimensions.

cond-mat.mes-hall

Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures

Recent works have revealed that van der Waals (vdW) epitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes strong limitation on orientation of grains is still not understood yet. In this work, we have focused on investigation of mechanism of self-alignment of MoS2 grains in vdW epitaxial growth on hBN. Through calculation based on density functional theory and the Lennard-Jones potential, we found that interaction energy between MoS2 and hBN strongly depends both on size and orientation of MoS2. We also found that, when size of MoS2 is ca. 40 nm, rotational energy barrier can exceed ~ 1 eV, which should suppress rotation to limit orientation of MoS2 even at growth temperature.

cond-mat.mes-hall

Observation and Spectral Assignment of a Family of Hexagonal Boron Nitride Lattice Defects

Atomic vacancy defects in single unit cell thick hexagonal boron nitride are of significant interest because of their photophysical properties, including single-photon emission, and promising applications in quantum communication and computation. The spectroscopic assignment of emission energies to specific atomic vacancies within the triangular lattice is confounded by the exponential scaling of defect candidates with the number of removed atoms. Herein, we collect more than 1000 spectra consisting of single, isolated zero-phonon lines between 1.69 and 2.25 eV, observing 6 quantized zero-phonon lines arising from hexagonal boron nitride vacancies. A newly developed computational framework for isomer cataloguing significantly narrows the number of candidate vacancies. Direct lattice imaging of hexagonal boron nitride, electronic structure calculations, and subsequent boric acid etching are used to definitively assign the 6 features. Systematic chemical etching supports the assignment by demonstrating the sequence of growth of successively larger vacancy centres from smaller ones, with the defects including a single B vacancy and a 16-atom triangular defect. These features exhibit a range of emission lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hexagonal boron nitride near 1370 cm-1. This assignment should significantly advance the solid-state chemistry and photophysics of such vacancy emitters.

cond-mat.mtrl-sci

Molecular monolayer stabilizer for multilayer 2D materials

2D van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines are highly effective in protecting the optoelectronic properties of these materials such as black phosphorous (BP) and transitional metal dichalcogenides. As a representative example, n-hexylamine can be applied in the form of thin molecular monolayers on BP flakes with less-than-2nm thickness and can prolong BP's lifetime from a few hours to several weeks and even months in ambient environments. Characterizations combined with our theoretical analysis show that the thin monolayers selectively sift out water molecules, forming a drying layer to achieve the passivation of the protected 2D materials. The monolayer coating is also stable in air, hydrogen annealing, and organic solvents, but can be removed by certain organic acids.

physics.app-ph

Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictions

The influence of nanostructuring and quantum confinement on the thermoelectric properties of materials has been extensively studied. While this has made possible multiple breakthroughs in the achievable figure of merit, classical confinement, and its effect on the local Seebeck coefficient has mostly been neglected, as has the Peltier effect in general due to the complexity of measuring small temperature gradients locally. Here we report that reducing the width of a graphene channel to 100 nm changes the Seebeck coefficient by orders of magnitude. Using a scanning thermal microscope allows us to probe the local temperature of electrically contacted graphene two-terminal devices or to locally heat the sample. We show that constrictions in mono- and bilayer graphene facilitate a spatially correlated gradient in the Seebeck and Peltier coefficient, as evidenced by the pronounced thermovoltage $V_{th}$ and heating/cooling response $ΔT_{Peltier}$, respectively. This geometry dependent effect, which has not been reported previously in 2D materials, has important implications for measurements of patterned nanostructures in graphene and points to novel solutions for effective thermal management in electronic graphene devices or concepts for single material thermocouples.

cond-mat.mes-hall

Field-Effect Control of Graphene-Fullerene Thermoelectric Nanodevices

Although it was demonstrated that discrete molecular levels determine the sign and magnitude of the thermoelectric effect in single-molecule junctions, full electrostatic control of these levels has not been achieved to date. Here, we show that graphene nanogaps combined with gold microheaters serve as a testbed for studying single-molecule thermoelectricity. Reduced screening of the gate electric field compared to conventional metal electrodes allows control of the position of the dominant transport orbital by hundreds of meV. We find that the power factor of graphene-fullerene junctions can be tuned over several orders of magnitude to a value close to the theoretical limit of an isolated Breit-Wigner resonance. Furthermore, our data suggest that the power factor of an isolated level is only given by the tunnel coupling to the leads and temperature. These results open up new avenues for exploring thermoelectricity and charge transport in individual molecules and highlight the importance of level alignment and coupling to the electrodes for optimum energy conversion in organic thermoelectric materials.

cond-mat.mes-hall

Electrically tunable organic-inorganic hybrid polaritons with monolayer WS2

Exciton-polaritons are quasiparticles consisting of a linear superposition of photonic and excitonic states, offering potential for nonlinear optical devices. The excitonic component of the polariton provides a finite Coulomb scattering cross section, such that the different types of exciton found in organic materials (Frenkel) and inorganic materials (Wannier-Mott) produce polaritons with different interparticle interaction strength. A hybrid polariton state with distinct excitons provides a potential technological route towards in-situ control of nonlinear behaviour. Here we demonstrate a device in which hybrid polaritons are displayed at ambient temperatures, the excitonic component of which is part Frenkel and part Wannier-Mott, and in which the dominant exciton type can be switched with an applied voltage. The device consists of an open microcavity containing both organic dye and a monolayer of the transition metal dichalcogenide WS$_2$. Our findings offer a perspective for electrically controlled nonlinear polariton devices at room temperature.

cond-mat.mes-hall

Scaling limits of graphene nanoelectrodes

Graphene is an ideal material for fabricating atomically thin nanometre spaced electrodes. Recently, carbon-based nanoelectrodes have been employed to create single-molecule transistors and phase change memory devices. In spite of the significant recent interest in their use in a range of nanoscale devices from phase change memories to molecular electronics, the operating and scaling limits of these electrodes are completely unknown. In this paper, we report on our observations of consistent voltage driven resistance switching in sub-5 nm graphene nanogaps. We find that we are able to reversibly cycle between a low and a high resistance state using feedback-controlled voltage ramps.We attribute this unexplained switching in the gap to the formation and breakdown of carbon filaments.By increasing the gap, we find that such intrinsic resistance switching of graphene nanogaps imposes a scaling limit of 10 nm (approx.) on the gap-size for devices with operating voltages of 1 to 2 volts.

cond-mat.mes-hall

Resonant optomechanics with a vibrating carbon nanotube and a radio-frequency cavity

In an optomechanical setup, the coupling between cavity and resonator can be increased by tuning them to the same frequency. We study this interaction between a carbon nanotube resonator and a radio-frequency circuit. In this resonant regime, the vacuum optomechanical coupling is enhanced by the DC voltage coupling the cavity and the mechanical resonator. Using the cavity to detect the nanotube's motion, we observe and simulate interference between mechanical and electrical oscillations. We measure the mechanical ring-down and show that further improvements to the system could enable measurement of mechanical motion at the quantum limit.

cond-mat.mes-hall

Quantum Interference in Graphene Nanoconstrictions

We report quantum interference effects in the electrical conductance of chemical vapor deposited graphene nanoconstrictions fabricated using feedback controlled electroburning. The observed multimode Fabry-Perot interferences can be attributed to reflections at potential steps inside the channel. Sharp antiresonance features with a Fano line shape are observed. Theoretical modeling reveals that these Fano resonances are due to localized states inside the constriction, which couple to the delocalized states that also give rise to the Fabry-Perot interference patterns. This study provides new insight into the interplay between two fundamental forms of quantum interference in graphene nanoconstrictions.

cond-mat.mes-hall

Room-temperature exciton-polaritons with two-dimensional WS2

Two-dimensional transition metal dichalcogenides exhibit strong optical transitions with significant potential for optoelectronic devices. In particular they are suited for cavity quantum electrodynamics in which strong coupling leads to polariton formation as a root to realisation of inversionless lasing, polariton condensationand superfluidity. Demonstrations of such strongly correlated phenomena to date have often relied on cryogenic temperatures, high excitation densities and were frequently impaired by strong material disorder. At room-temperature, experiments approaching the strong coupling regime with transition metal dichalcogenides have been reported, but well resolved exciton-polaritons have yet to be achieved. Here we report a study of monolayer WS$_2$ coupled to an open Fabry-Perot cavity at room-temperature, in which polariton eigenstates are unambiguously displayed. In-situ tunability of the cavity length results in a maximal Rabi splitting of $\hbar Ω_{\rm{Rabi}} = 70$ meV, exceeding the exciton linewidth. Our data are well described by a transfer matrix model appropriate for the large linewidth regime. This work provides a platform towards observing strongly correlated polariton phenomena in compact photonic devices for ambient temperature applications.

cond-mat.mes-hall

Photon-assisted tunneling and charge dephasing in a carbon nanotube double quantum dot

We report microwave-driven photon-assisted tunneling in a suspended carbon nanotube double quantum dot. From the resonant linewidth at a temperature of 13 mK, the charge dephasing time is determined to be 280 +- 30 ps. The linewidth is independent of driving frequency, but increases with increasing temperature. The moderate temperature dependence is inconsistent with expectations from electron-phonon coupling alone, but consistent with charge noise arising in the device. The extracted level of charge noise is comparable with that expected from previous measurements of a valley-spin qubit, where it was hypothesized to be the main cause of qubit decoherence. Our results suggest a possible route towards improved valley-spin qubits.

cond-mat.mes-hall

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

cond-mat.mes-hall

Direct Low Temperature Nano-Graphene Synthesis over a Dielectric Insulator

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nano-graphene and few layer graphene is directly formed over magnesium oxide and can be achieved at temperatures as low as 325 °C.

cond-mat.mes-hall

The catalytic potential of high-k dielectrics for graphene formation

The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data highlight the importance of step sites for graphene growth on MgO.

cond-mat.mes-hall

Lead Sulphide Nanocrystal: Conducting Polymer Solar Cells

In this paper we report photovoltaic devices fabricated from PbS nanocrystals and the conducting polymer poly MEH-PPV. This composite material was produced via a new single-pot synthesis which solves many of the issues associated with existing methods. Our devices have white light power conversion efficiencies under AM1.5 illumination of 0.7% and single wavelength conversion efficiencies of 1.1%. Additionally, they exhibit remarkably good ideality factors (n=1.15). Our measurements show that these composites have significant potential as soft optoelectronic materials.

cond-mat.mtrl-sci