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arXiv · 1509.06643

Antisite defects at oxide interfaces

Hanghui Chen·Andrew J. Millis
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Abstract

We use \textit{ab initio} calculations to estimate formation energies of cation (transition metal) antisite defects at oxide interfaces and to understand the basic physical effects that drive or suppress the formation of these defects. Antisite defects are found to be favored in systems with substantial charge transfer across the interface, while Jahn-Teller distortions and itinerant ferromagnetism can prevent antisite defects and help stabilize atomically sharp interfaces. Our results enable identification of classes of systems that may be more and less susceptible to the formation of antisite defects and motivate experimental studies and further theoretical calculations to elucidate the local structure and stability of oxide interface systems.

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Hanghui Chen, Andrew J. Millis. 2015-09-22. Antisite defects at oxide interfaces. https://doi.org/10.1103/physrevb.93.104111

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