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arXiv · 1510.01143

Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction

Andreas Brenneis·Jan Overbeck·Julian Treu·Simon Hertenberger·Stefanie Morkötter·Markus Döblinger·Jonathan J. Finley·Gerhard Abstreiter·Gregor Koblmüller·Alexander W. Holleitner
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Abstract

We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases.

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Andreas Brenneis, Jan Overbeck, Julian Treu, Simon Hertenberger, Stefanie Morkötter, Markus Döblinger, Jonathan J. Finley, Gerhard Abstreiter, Gregor Koblmüller, Alexander W. Holleitner. 2015-10-05. Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction. https://doi.org/10.1021/acsnano.5b03017

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