arXiv subjects

Alexander W. Holleitner

Publications and source records attributed to Alexander W. Holleitner.

At least 19 recordsLinked to original sources

arXiv2026

Resonant Raman signatures of bright and momentum-dark exciton coupled by intervalley phonon scattering in monolayer WSe2

Exciton-phonon coupling in atomically thin transition metal dichalcogenides governs key processes such as exciton thermalization and intervalley scattering and remains challenging to access directly by optical spectroscopy. Here, we employ resonance Raman spectroscopy at cryogenic temperatures to probe exciton-phonon coupling in hBN-encapsulated WSe_2 monolayers. Tuning the excitation laser across the bright exciton X_KK resonance, we observe rich Raman spectra and focus on the resonance profile of the degenerate A_1'/E' optical phonon mode. The profile exhibits two asymmetric resonance peaks whose energetic separation significantly exceeds the phonon energy - a feature that cannot be explained by first-order Raman scattering alone. We demonstrate that this discrepancy is resolved by including third-order Raman scattering, in which intervalley scattering enabled by a finite-momentum phonon couples the bright exciton X_KK to a momentum-dark exciton X_d. Fitting the experimental resonance profiles of two independent samples with a model comprising coherent first- and third-order scattering yields consistent exciton energies and linewidths, with a momentum-dark exciton X_d approximately 45meV to 55meV below the bright exciton X_KK. The results indicate efficient bright-to-dark exciton coupling. Our findings provide a microscopic framework for understanding the anomalously bright emission spectra of WSe_2 monolayers despite its spin-forbidden lowest exciton transition and highlight the role of momentum-dark excitons in resonant light-matter interaction.

cond-mat.mtrl-sci↗

arXiv2026

Second-Harmonic Imaging of Magnetic Domains in Thin Film Hematite

Hematite is an antiferromagnetic oxide and candidate altermagnetic insulator whose Néel order reorients from an easy-axis to an easy-plane phase at the Morin transition. Interpreting altermagnetic transport and symmetry sensitive optical responses requires knowledge of the Néel vector orientation relative to the crystal axes and of the domain structure within the probed device. Here, we show that polarization-resolved second-harmonic generation (SHG) microscopy resolves magnetic symmetry and domains in epitaxial (0001)-oriented hematite films. Across the Morin temperature, the SHG polarization anisotropy evolves from an approximately sixfold pattern consistent with the easy-axis orientation to pronounced twofold patterns consistent with the easy-plane orientation. A symmetry analysis based on magnetic-dipole and electric-quadrupole contributions reproduces this evolution. Importantly, the interference between SHG amplitudes that are odd and even under reversal of the magnetic order renders opposite Néel-vector orientations optically distinguishable. Consistently, opposite directions of an applied in-plane magnetic field produce distinct SHG responses in our experiments. Using this magnetic contrast, we image micrometer-scale domains, their reorganization across the Morin transition, and their reconfiguration under magnetic and thermal cycling, including a remanent change after cycling through the spin-flop transition. These results establish SHG microscopy as a local probe of magnetic symmetry, Néel-vector orientation, and domain evolution in hematite films.

cond-mat.mtrl-sci↗

arXiv2026

Ultrafast photo-thermoelectric currents in graphene junctions in the mid-infrared

Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths with photon energies below the optical phonon energy remains an open question. Here, we investigate the carrier dynamics in graphene junctions under mid-infrared excitation using an ultrafast pump-probe photocurrent spectroscopy. We utilize dual split gate devices to demonstrate that the photo-thermoelectric effect can dominate the photoresponse of graphene also for a mid-infrared femtosecond excitation. We observe that graphene retains its broadband photocurrent response in this spectral region, but the photocurrent relaxation time increases from ca. 2 ps below 8-9 micrometer up to 3 ps at longer mid-infrared wavelengths. The absence of a pronounced phonon bottleneck in the decay dynamics at room temperature suggests an efficient interplay of electron-electron and electron-phonon scattering even for photon energies below the optical phonon energy in graphene. The observed wavelength dependence of the photocurrent relaxation times is consistent with energy-dependent theoretical relaxation times as derived from a microscopic transport theory of graphene that includes electron-phonon coupling within a Holstein-Peierls Hamiltonian.

cond-mat.mes-hall↗

arXiv2026

Zero-phonon line emission of single photon emitters in helium-ion treated MoS$_2$

We explore the zero-phonon line of single photon emitters in helium-ion treated monolayer MoS$_2$, which are currently understood in terms of single sulfur-site vacancies. By comparing the linewidths of the zero-phonon line as extracted directly from optical spectra with values inferred from the first-order autocorrelation function of the photoluminescence, we quantify bounds of the homogeneous broadening and of phonon-assisted contributions. The results are discussed in terms of both the independent boson model and ab-initio results as computed from GW and Bethe-Salpeter equation approximations.

cond-mat.mes-hall↗

arXiv2026

High-Energy Interlayer Exciton Ensembles in MoSe$_2$/WSe$_2$ Heterostructures by Laguerre-Gaussian Excitation

We reveal the higher energetic luminescence part of interlayer exciton ensembles in MoSe$_2$/WSe$_2$ heterostructures upon excitation by an optical Laguerre-Gaussian mode. The excitation is achieved with the help of a spatial light modulator giving rise to a ring-shaped distribution of interlayer excitons. A hyperspectral analysis of the exciton photoluminescence suggests that the excitation scheme allows the accumulation of high-energetic excitons in the rings' center. We discuss the mechanisms leading to such a distribution, including exciton-exciton interaction, phase-space filling, and an incomplete thermalization.

cond-mat.mes-hall↗

arXiv2026

Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride

We highlight recent advances in the controlled creation of single-photon emitters in van der Waals materials and in the understanding of their atomistic origin. We focus on quantum emitters created in monolayer transition-metal dichalcogenide semiconductors, which provide spectrally sharp single-photon emission at cryogenic temperatures, and the ones in insulating hBN, which provide bright and stable single-photon emission up to room temperature. After introducing the different classes of quantum emitters in terms of band-structure properties, we review the defect creation methods based on electron and ion irradiation as well as local strain engineering and plasma treatments. A main focus of the review is put on discussing the microscopic origin of the quantum emitters as revealed by various experimental platforms, including optical and scanning probe methods.

cond-mat.mes-hall↗

arXiv2025

Carrier-envelope phase control of ultrafast photocurrents in layered MoS$_2$

We demonstrate carrier-envelope-phase (CEP)-controlled photocurrents in mono-, bi-, and tri-layer MoS$_2$ driven by few-cycle laser pulses. The photocurrent in the two-terminal devices scales quadratically with the field amplitude, indicating perturbative carrier dynamics in the weak-field regime distinct from strong-field tunnelling. Our results extend light-field-sensitive current control from bulk dielectrics, semiconductors, and graphene to two-dimensional transition-metal dichalcogenides, highlighting their potential for electric-field sensitive optoelectronics.

cond-mat.mes-hall↗

arXiv2025

Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride

Hexagonal boron nitride (hBN) hosts luminescent defects possessing spin qualities compatible with quantum sensing protocols at room temperature. Vacancies, in particular, are readily obtained via exposure to high-energy ion beams. While the defect creation mechanism via such irradiation is well understood, the occurrence rate of optically active negatively charged vacancies ($V_B^-$) is an open question. In this work, we exploit focused helium ions to systematically generate optically active vacancy defects in hBN flakes at varying density. By comparing the density-dependent spin splitting measured by magnetic resonance to calculations based on a microscopic charge model, in which we introduce a correction term due to a constant background charge, we are able to quantify the number of $V_B^-$ defects generated by the ion irradiation. We find a lower bound for the fraction (0.2%) of all vacancies in the optically active, negatively charged state. Our results provide a protocol for measuring the generation efficiency of $V_B^-$, which is necessary for understanding and optimizing luminescent centers in hBN.

cond-mat.mes-hall↗

arXiv2024

Laterally Extended States of Interlayer Excitons in Reconstructed MoSe$_2$/WSe$_2$ Heterostructures

Heterostructures made from 2D transition-metal dichalcogenides are known as ideal platforms to explore excitonic phenomena ranging from correlated moiré excitons to degenerate interlayer exciton ensembles. So far, it is assumed that the atomic reconstruction appearing in some of the heterostructures gives rise to a dominating localization of the exciton states. We demonstrate that excitonic states in reconstructed MoSe$_2$/WSe$_2$ heterostructures can extend well beyond the moiré periodicity of the investigated heterostructures. The results are based on real-space calculations yielding a lateral potential map for interlayer excitons within the strain-relaxed heterostructures and corresponding real-space excitonic wavefunctions. We combine the theoretical results with cryogenic photoluminescence experiments, which support the computed level structure and relaxation characteristics of the interlayer excitons.

cond-mat.mes-hall↗

arXiv2024

Lasing of Moiré Trapped MoSe$_2$/WSe$_2$ Interlayer Excitons Coupled to a Nanocavity

We report lasing of moiré trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer into a high-$Q$ ($>10^4$) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field and measure their dipolar coupling strength to be $78 \pm 4\ \mathrm{μeV}$, fully consistent with the 82 $\mathrm{μeV}$ predicted by theory. The emission from the cavity mode shows clear threshold-like behavior as the transition is tuned into resonance with the cavity. We observe a superlinear power dependence accompanied by a narrowing of the linewidth as the distinct features of lasing. The onset and prominence of these threshold-like behaviors are pronounced at resonance while weak off-resonance. Our results show that a lasing transition can be induced in interacting moiré IXs with macroscopic coherence extending over the length scale of the cavity mode. Such systems raise interesting perspectives for low-power switching and synaptic nanophotonic devices using two-dimensional materials.

cond-mat.mes-hall↗

arXiv2024

Interlayer and moiré excitons in atomically thin double layers: from individual quantum emitters to degenerate ensembles

Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to drastically enlarged exciton binding energies, exciting spin-valley properties, elongated lifetimes, and large permanent dipoles. The latter allows modification by electric fields and the study of thermalized bosonic quasiparticles, from the single particle level to interacting degenerate dense ensembles. Additionally, the freedom to combine bilayers of different van der Waals materials without lattice or relative twist angle constraints leads to layer hybridized and moiré excitons which can be widely engineered. This review covers fundamental aspects of IXs including correlation phenomena as well as the consequence of moiré superlattices with a strong focus on TMD homo- and hetero-bilayers.

cond-mat.mes-hall↗

arXiv2023

Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin

The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: $\mathrm{C_2C_B}$, $\mathrm{C_2C_N}$, and $\mathrm{V_NC_B}$. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy 170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.

cond-mat.mtrl-sci↗

arXiv2023

Exciton-phonon-scattering: A competition between bosonic and fermionic nature of bound electron-hole pairs

The question of macroscopic occupation and spontaneous emergence of coherence for exciton ensembles has gained renewed attention due to the rise of van der Waals heterostructures made of atomically thin semiconductors. The hosted interlayer excitons exhibit nanosecond lifetimes, long enough to allow for excitonic thermalization in time. Several experimental studies reported signatures of macroscopic occupation effects at elevated exciton densities. With respect to theory, excitons are composite particles formed by fermionic constituents, and a general theoretical argument for a bosonic thermalization of an exciton gas beyond the linear regime is still missing. Here, we derive an equation for the phonon mediated thermalization at densities above the classical limit, and identify which conditions favor the thermalization of fermionic or bosonic character, respectively. In cases where acoustic, quasielastic phonon scattering dominates the dynamics, our theory suggests that transition metal dichalcogenide (TMDC) excitons might be bosonic enough to show bosonic thermalization behaviour and decreasing dephasing for increasing exciton densities. This can be interpreted as a signature of an emerging coherence in the exciton ground state, and agrees well with the experimentally observed features, such as a decreasing linewidth for increasing densities.

cond-mat.mes-hall↗

arXiv2023

Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$

Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $\sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.

cond-mat.mes-hall↗

arXiv2023

Extended spatial coherence of interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers

We report on the spatial coherence of interlayer exciton ensembles as formed in MoSe$_2$/WSe$_2$ heterostructures and characterized by point-inversion Michelson-Morley interferometry. Below 10 K, the measured spatial coherence length of the interlayer excitons reaches values equivalent to the lateral expansion of the exciton ensembles. In this regime, the light emission of the excitons turns out to be homogeneously broadened in energy with a high temporal coherence. At higher temperatures, both the spatial coherence length and the temporal coherence time decrease, most likely because of thermal processes. The presented findings point towards a spatially extended, coherent many-body state of interlayer excitons at low temperature.

cond-mat.mes-hall↗

arXiv2022

Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS$_2$ Monolayers

Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS$_2$ monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass wavefunction is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way towards harnessing novel light-matter interaction regimes for applications in quantum photonics.

cond-mat.mes-hall↗

arXiv2022

Ultra-Sensitive Extinction Measurements of Optically Active Defects in Monolayer MoS$_2$

We utilize cavity-enhanced extinction spectroscopy to directly quantify the optical absorption of defects in MoS$_2$ generated by helium ion bombardment. We achieve hyperspectral imaging of specific defect patterns with a detection limit below 0.01% extinction, corresponding to a detectable defect density below $10^{11}$ cm$^{-2}$. The corresponding spectra reveal a broad sub-gap absorption, being consistent with theoretical predictions related to sulfur vacancy-bound excitons in MoS$_2$. Our results highlight cavity-enhanced extinction spectroscopy as efficient means for the detection of optical transitions in nanoscale thin films with weak absorption, applicable to a broad range of materials.

cond-mat.mes-hall↗

arXiv2022

Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures

Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence.

cond-mat.mtrl-sci↗