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arXiv · 1511.00093

Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal

Jung-Won Chang·Joon Sung Lee·Tae Ho Lee·Jinhee Kim·Yong-Joo Doh
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Abstract

We report controlled formation of sub-100 nm-thin electron channels in SrTiO$_3$ by doping with oxygen vacancies induced by Ar$^+$-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm$^2$V$^{-1}$s$^{-1}$), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression. With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics.

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Jung-Won Chang, Joon Sung Lee, Tae Ho Lee, Jinhee Kim, Yong-Joo Doh. 2015-10-31. Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal. https://doi.org/10.7567/apex.8.055701

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