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arXiv · 1511.02516

Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method

Jun Z. Huang·Lining Zhang·Pengyu Long·Michael Povolotskyi·Gerhard Klimeck
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Abstract

III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current. Their 3D quantum transport study using non-equilibrium Green's function method is computationally very intensive, in particular when combined with multiband approaches such as the eight-band K.P method. To reduce the numerical cost, an efficient reduced-order method is developed in this article and applied to study homojunction InAs and heterojunction GaSb-InAs nanowire TFETs. Device performances are obtained for various channel widths, channel lengths, crystal orientations, doping densities, source pocket lengths, and strain conditions.

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Jun Z. Huang, Lining Zhang, Pengyu Long, Michael Povolotskyi, Gerhard Klimeck. 2015-11-08. Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method. https://doi.org/10.1007/978-3-319-31653-6_6

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