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arXiv · 1511.03017

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Zhipeng Hou·Yue Wang·Enke Liu·Hongwei Zhang·Wenhong Wang·Guangheng Wu
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Abstract

High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic field of 1T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V-1s-1 at 2K - 2016 cm2V-1s-1 at 300K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors, but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.

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Zhipeng Hou, Yue Wang, Enke Liu, Hongwei Zhang, Wenhong Wang, Guangheng Wu. 2015-11-10. Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal. https://doi.org/10.1063/1.4936179

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