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arXiv · 1511.08867

Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures

Kalon Gopinadhan·Young Jun Shin·Rashid Jalil·Thirumalai Venkatesan·Andre K. Geim·Antonio H. Castro Neto·Hyunsoo Yang
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Abstract

Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistance of > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

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Kalon Gopinadhan, Young Jun Shin, Rashid Jalil, Thirumalai Venkatesan, Andre K. Geim, Antonio H. Castro Neto, Hyunsoo Yang. 2015-11-28. Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures. https://doi.org/10.1038/ncomms9337

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