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arXiv · 1512.04492

Parallel Stitching of Two-Dimensional Materials

Xi Ling·Yuxuan Lin·Qiong Ma·Ziqiang Wang·Yi Song·Lili Yu·Shengxi Huang·Wenjing Fang·Xu Zhang·Allen L. Hsu·Yaqing Bie·Yi-Hsien Lee·Yimei Zhu·Lijun Wu·Ju Li·Pablo Jarillo-Herrero·Mildred S. Dresselhaus·Tomás Palacios·Jing Kong
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Abstract

Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.

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Xi Ling, Yuxuan Lin, Qiong Ma, Ziqiang Wang, Yi Song, Lili Yu, Shengxi Huang, Wenjing Fang, Xu Zhang, Allen L. Hsu, Yaqing Bie, Yi-Hsien Lee, Yimei Zhu, Lijun Wu, Ju Li, Pablo Jarillo-Herrero, Mildred S. Dresselhaus, Tomás Palacios, Jing Kong. 2015-12-14. Parallel Stitching of Two-Dimensional Materials. https://doi.org/10.1002/adma.201505070

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