Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations

V. P. Gusynin; S. G. Sharapov; A. A. Reshetnyak

doi:10.1063/1.4932760

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arXiv · 1512.08579

Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations

V. P. Gusynin·S. G. Sharapov·A. A. Reshetnyak

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Abstract

We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.

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V. P. Gusynin, S. G. Sharapov, A. A. Reshetnyak. 2015-12-29. Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations. https://doi.org/10.1063/1.4932760

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