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arXiv · 1601.01551

Quantum electronic transport of topological surface states in beta-Ag2Se nanowire

Jihwan Kim·Ahreum Hwang·Sang-Hoon Lee·Seung-Hoon Jhi·Sunghun Lee·Yun Chang Park·Si-in Kim·Hong-Seok Kim·Yong-Joo Doh·Jinhee Kim·Bongsoo Kim
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Abstract

Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that the band inversion in \b{eta}-Ag2Se is caused by strong spin-orbit coupling and Ag-Se bonding hybridization. These extensive investigations provide new meaningful information about silver-chalcogenide TIs that have anisotropic Dirac cones, which could be useful for spintronics applications.

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Jihwan Kim, Ahreum Hwang, Sang-Hoon Lee, Seung-Hoon Jhi, Sunghun Lee, Yun Chang Park, Si-in Kim, Hong-Seok Kim, Yong-Joo Doh, Jinhee Kim, Bongsoo Kim. 2016-01-07. Quantum electronic transport of topological surface states in beta-Ag2Se nanowire. https://doi.org/10.1021/acsnano.5b07368

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