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arXiv · 1601.04353

Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

Fatih Akyol·Sriram Krishnamoorthy·Yuewei Zhang·Jared M. Johnson·Jinwoo Hwang·Siddharth Rajan
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Abstract

We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm^2 at 7.6 V, with a low series device resistance of 1 x 10^-5 ohm.cm^2.

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Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared M. Johnson, Jinwoo Hwang, Siddharth Rajan. 2016-02-09. Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance. https://doi.org/10.1063/1.4944998

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