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arXiv · 1603.05640

Dephasing measurements in InGaAs/AlInAs heterostructures: manifestations of spin-orbit and Zeeman interactions

L. H. Tzarfati·A. Aharony·O. Entin-Wohlman·M. Karpovski·V. Shelukhin·V. Umansky·A. Palevski
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Abstract

We have measured weak antilocalization effects, universal conductance fluctuations, and Aharonov-Bohm oscillations in the two-dimensional electron gas formed in InGaAs/AlInAs heterostructures. This system possesses strong spin-orbit coupling and a high Landé factor. Phase-coherence lengths of 2$-$4 $μ$m at 1.5$-$4.2 K are extracted from the magnetoconductance measurements. The analysis of the coherence-sensitive data reveals that the temperature dependence of the decoherence rate complies with the dephasing mechanism originating from electron-electron interactions in all three experiments. Distinct beating patterns superimposed on the Aharonov-Bohm oscillations are observed over a wide range of magnetic fields, up to 0.7 Tesla at the relatively high temperature of 1.5 K. The possibility that these beats are due to the interplay between the Aharonov-Bohm phase and the Berry one, different for electrons of opposite spins in the presence of strong spin-orbit and Zeeman interactions in ring geometries, is carefully investigated. It appears that our data are not explained by this mechanism; rather, a few geometrically-different electronic paths within the ring's width can account for the oscillations' modulations.

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L. H. Tzarfati, A. Aharony, O. Entin-Wohlman, M. Karpovski, V. Shelukhin, V. Umansky, A. Palevski. 2016-04-21. Dephasing measurements in InGaAs/AlInAs heterostructures: manifestations of spin-orbit and Zeeman interactions. https://doi.org/10.4236/jmp.2017.81010

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