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V. Umansky

Publications and source records attributed to V. Umansky.

At least 19 recordsLinked to original sources

Resonant Photoluminescence of Quantum Incompressible Liquids

We investigate resonant photoluminescence arising from incompressible quantum liquids formed in two-dimensional electron systems. We demonstrate that, for excitons composed of a photoexcited electron occupying the upper spin sublevel of the zeroth Landau level and a valence-band hole, the influence of disorder potential fluctuations on optical recombination is strongly suppressed, indicating complete screening of the disorder. We identify an optical invariant quantity that is insensitive to excitation energy yet strongly dependent on the electron temperature, serving as a probe of exciton recombination in quantum liquids. Analysis of this quantity reveals that quantum-liquid formation initiates at (n = 1/3) as the electron temperature decreases, consistent with the Laughlin state. Upon further cooling, the range of filling factors exhibiting quantum-liquid behavior expands continuously from (n = 1/3) toward (n = 1/2). Transitions between distinct incompressible quantum-liquid states occur smoothly, without well-defined phase boundaries separating insulating and conducting regimes. Locally, the system retains quantum-liquid characteristics even as bulk transport measurements indicate finite conductivity. Finally, we present a phase diagram delineating the stability region of incompressible quantum liquids relative to conductive phases.

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Observation of Electronic Modes in Open Cavity Resonator

The resemblance between electrons and optical waves has strongly driven the advancement of mesoscopic physics. However, electron waves have yet to be understood in open cavity structures which have provided contemporary optics with rich insight towards non-Hermitian systems and complex interactions between resonance mode. Here, we report the realization of an open cavity resonator in a two-dimensional electronic system. We studied the resonant electron modes within the cavity and resolved the signatures of longitudinal and transverse quantization, showing that the modes are robust despite the openness of the cavity being highly open to the background continuum. The transverse modes were investigated by applying a controlled deformation to the cavity, and their spatial distributions were further analyzed using magnetoconductance measurements and numerical simulation. These results lay the groundwork to exploring electronic wavefunctions in the context of modern optical systems, such as the dielectric microcavity.

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Non-linear optical response of the excited Laughlin liquid

An ensemble of neutral excitations is constructed experimentally in the Laughlin liquid at the electron filling factor 1/3. The excitations are found to induce a nonlinear optical response, manifested as a quadratic dependence of the reflection signal on the excitation power. The reported experimental results indicate that the observed effect is due to the contribution of the coherent anti-Stokes-Stokes scattering of light from the excited Laughlin liquid.

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Ultrafast energy relaxation of quantum dot-generated 2D hot electrons

Through a series of transverse magnetic focusing experiments, we show that hot electrons in a two-dimensional electron gas system undergo an ultrafast relaxation when generated by a quantum dot (QD) instead of a quantum point contact (QPC). We find here that QPC hot electrons were well described by the non-interacting Fermi gas model for excitations up to 1.5 meV above the Fermi level of 7.44 meV, whereas QD hot electrons exhibited an energy loss quadratic to the excitation. The energy relaxation was a sizeable fraction of the tested excitations, up to about 55%. With the proposal that the hot electrons are relaxed by the QD immediately after emission, we present a toy model in which a capacitive coupling between the QD and its leads results in a finite, ultrafast energy relaxation.

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The Local Incompressibility of Fractional Quantum Hall States at a Filling Factor of 3/2

We studied neutral excitations in a two-dimensional electron system with an orbital momentum $ΔM = 1$ and spin projection over magnetic field axis $ΔS_z = 1$ in the vicinity of a filling factor of 3/2. It is shown that the 3/2 state is a singular point in the filling factor dependence of the spin ordering of the two-dimensional electron system. In the vicinity of $ν=3/2$, a significant increase in the relaxation time ($τ= 13$ $μ\text{s}$) for the excitations to the ground state is exhibited even though the number of vacancies in the lowest energy level is macroscopically large. The decrease of the relaxation rate is related to the spin texture transformation in the ground state induced by spin flips and electron density rearrangement. We claim the 3/2 state is a locally incompressible fractional quantum Hall state.

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Interaction-induced interference in the integer quantum Hall effect

In recent interference experiments with an electronic Fabry-Perot interferometer (FPI), implemented in the integer quantum Hall effect regime, a flux periodicity of $h/2e$ was observed at bulk fillings $ν_B>2.5$. The halved periodicity was accompanied by an interfering charge $e^*=2e$, determined by shot noise measurements. Here, we present measurements, demonstrating that, counterintuitively, the coherence and the interference periodicity of the interfering chiral edge channel are solely determined by the coherence and the enclosed flux of the adjacent edge channel. Our results elucidate the important role of the latter and suggest that a neutral chiral edge mode plays a crucial role in the pairing phenomenon. Our findings reveal that the observed pairing of electrons is not a curious isolated phenomenon, but one of many manifestations of unexpected edge physics in the quantum Hall effect regime.

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Characterization of individual layers in a bilayer electron system produced in a wide quantum well

Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system.

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Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

We report on Hall field-induced resistance oscillations (HIRO) in a 60 nm-wide GaAs/AlGaAs quantum well with an \emph{in situ} grown back gate, which allows tuning the carrier density $n$. At low $n$, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with $n^{-1/2}$, as expected. Remarkably, population of the second subband (SB2) significantly enhances HIRO, while their frequency now scales as $n^{-1}$. We demonstrate that in this two-subband regime HIRO still originate solely from backscattering of SB1 electrons. The unusual density dependence occurs because the population of SB2 steadily increases, while that of SB1 remains essentially unchanged. The enhancement of HIRO manifests an unexpected, step-like increase of the quantum lifetime of SB1 electrons, which reaches a record value of 52 ps in the two-subband regime.

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Microwave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States

In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system is sensitive to a redistribution of electrons over energy states, since it entails a shift of the electron charge perpendicular to the plane. In such a system microwave induced magnetocapacitance oscillations have been observed. They can only be accounted for by an electron distribution function oscillating with energy due to Landau quantization, one of the quantum mechanisms proposed for the resistance oscillations.

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Dephasing measurements in InGaAs/AlInAs heterostructures: manifestations of spin-orbit and Zeeman interactions

We have measured weak antilocalization effects, universal conductance fluctuations, and Aharonov-Bohm oscillations in the two-dimensional electron gas formed in InGaAs/AlInAs heterostructures. This system possesses strong spin-orbit coupling and a high Landé factor. Phase-coherence lengths of 2$-$4 $μ$m at 1.5$-$4.2 K are extracted from the magnetoconductance measurements. The analysis of the coherence-sensitive data reveals that the temperature dependence of the decoherence rate complies with the dephasing mechanism originating from electron-electron interactions in all three experiments. Distinct beating patterns superimposed on the Aharonov-Bohm oscillations are observed over a wide range of magnetic fields, up to 0.7 Tesla at the relatively high temperature of 1.5 K. The possibility that these beats are due to the interplay between the Aharonov-Bohm phase and the Berry one, different for electrons of opposite spins in the presence of strong spin-orbit and Zeeman interactions in ring geometries, is carefully investigated. It appears that our data are not explained by this mechanism; rather, a few geometrically-different electronic paths within the ring's width can account for the oscillations' modulations.

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Universal Fermi liquid crossover and quantum criticality in a mesoscopic device

Quantum critical systems derive their finite temperature properties from the influence of a zero temperature quantum phase transition. The paradigm is essential for understanding unconventional high-Tc superconductors and the non-Fermi liquid properties of heavy fermion compounds. However, the microscopic origins of quantum phase transitions in complex materials are often debated. Here we demonstrate experimentally, with support from numerical renormalization group calculations, a universal crossover from quantum critical non-Fermi liquid behavior to distinct Fermi liquid ground states in a highly controllable quantum dot device. Our device realizes the non-Fermi liquid two-channel Kondo state, based on a spin-1/2 impurity exchange-coupled equally to two independent electronic reservoirs. Arbitrarily small detuning of the exchange couplings results in conventional screening of the spin by the more strongly coupled channel for energies below a Fermi liquid scale T*. We extract a quadratic dependence of T* on gate voltage close to criticality and validate an asymptotically exact description of the universal crossover between strongly correlated non-Fermi liquid and Fermi liquid states.

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The photoresponse of a two-dimensional electron gas at the second harmonic of the cyclotron resonance

Terahertz spectroscopy experiments at magnetic fields and low temperatures were carried out on samples of different gate shapes processed on a high electron mobility GaAs/AlGaAs heterostructure. For a given radiation frequency, multiple magnetoplasmon resonances were observed with a dispersion relation described within a local approximation of the magnetoconductivity tensor. The second harmonic of the cyclotron resonance was observed and its appearance was interpreted as resulting from a high frequency, inhomogeneous electromagnetic field on the border of a two-dimensional electron gas with a metallic gate and/or an ohmic contact.

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Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the cyclotron resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with the THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

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Charge frustration in a triangular triple quantum dot

We experimentally investigate the charge (isospin) frustration induced by a geometrical symmetry in a triangular triple quantum dot. We observe the ground-state charge configurations of six-fold degeneracy, the manifestation of the frustration. The frustration results in omnidirectional charge transport, and it is accompanied by nearby nontrivial triple degenerate states in the charge stability diagram. The findings agree with a capacitive interaction model. We also observe unusual transport by the frustration, which might be related to elastic cotunneling and the interference of trajectories through the dot. This work demonstrates a unique way of studying geometrical frustration in a controllable way.

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Multi-Valued Logic Gates based on Ballistic Transport in Quantum Point Contacts

Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two quaternary number inputs is demonstrated. The device is scalable to allow multiple inputs, which makes it possible to find the minimum of multiple inputs in a single gate operation. Also, the principle of a half-adder for quaternary number inputs is demonstrated. First, an adder that adds up two quaternary numbers and outputs the sum of inputs is demonstrated. Second, a device to express the sum of the adder into two quaternary digits [Carry (first digit) and Sum (second digit)] is demonstrated. All the logic gates presented in this paper can in principle be extended to allow decimal number inputs with high quality QPCs.

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The local nature of incompressibility at quantised Hall effect modified by interactions

Since the experimental realisation of the integer quantised Hall effect in a two dimensional electron system subject to strong perpendicular magnetic fields in 1980, a central question has been the interrelation between the conductance quantisation and the topological properties of the system. It is conjectured that if the electron system is described by a Bloch hamiltonian, then the system is insulating in the bulk of the sample throughout the quantised Hall plateau due to magnetic field induced energy gap. Meanwhile, the system is conducting at the edges resembling a 2+1 dimensional topological insulator without the time-reversal symmetry. However, the validity of this conjecture remains unclear for finite size, non-periodically bounded real Hall bar devices. Here we show experimentally that the close relationship proposed between the quantised Hall effect and the topological bulk insulator is prone to break for specific magnetic field intervals within the plateau evidenced by our magneto-transport measurements performed on GaAs/AlGaAs high purity Hall bars with two inner contacts embedded to bulk. Our data presents a similar behaviour also for fractional states, in particular for 2/3, 3/5 and 4/3.

cond-mat.mes-hall

An Electronic Quantum Eraser

Complementarity, the incomplete nature of a quantum measurement - a core concept in quantum mechanics - stems from the choice of the measurement apparatus. The notion of complementarity is closely related to Heisenberg's uncertainty principle, but the exact relation between the two remains a source of debate. For example, knowledge of a particle's position in a double slit interference experiment will quench its wave-like nature and, vice versa, observing the wave property via interference implies lack of knowledge of the particle's path. A canonical system for exploring complementarity is the quantum eraser (QE), predominantly studied thus far in photonic systems. A QE is an interference experiment consisting of two stages. First, one of the interfering paths is coupled to a 'which path' (WP) detector - demonstrating loss of interference due to acquisition of WP information. Second, the WP information is being 'erased' by projecting the detector's wavefunction on a particular basis; this renders the WP information inaccessible, thus allowing reconstruction of the interference pattern. In this work, we present a first implementation of a QE in an electronic system. Our system consists of two identical electronic Mach-Zehnder interferometers (MZIs) entangled via Coulomb interactions. Such novel setup has already attracted a considerable theoretical attention. With one MZI serving as a path detector and the other as the system interferometer, the visibility of the Aharonov-Bohm oscillation in the System can be controlled by the Detector. We demonstrate how a continuous change of the measurement basis, followed by post selection (via cross correlation of current fluctuations), allows a smooth transition between keeping and erasing the WP information.

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Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit

Two level systems that can be reliably controlled and measured hold promise in both metrology and as qubits for quantum information science (QIS). When prepared in a superposition of two states and allowed to evolve freely, the state of the system precesses with a frequency proportional to the splitting between the states. In QIS,this precession forms the basis for universal control of the qubit,and in metrology the frequency of the precession provides a sensitive measurement of the splitting. However, on a timescale of the coherence time, $T_2$, the qubit loses its quantum information due to interactions with its noisy environment, causing qubit oscillations to decay and setting a limit on the fidelity of quantum control and the precision of qubit-based measurements. Understanding how the qubit couples to its environment and the dynamics of the noise in the environment are therefore key to effective QIS experiments and metrology. Here we show measurements of the level splitting and dephasing due to voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Using free evolution and Hahn echo experiments we probe the low frequency and high frequency environmental fluctuations, respectively. The measured fluctuations at high frequencies are small, allowing the qubit to be used as a charge sensor with a sensitivity of $2 \times 10^{-8} e/\sqrt{\mathrm{Hz}}$, two orders of magnitude better than the quantum limit for an RF single electron transistor (RF-SET). We find that the dephasing is due to non-Markovian voltage fluctuations in both regimes and exhibits an unexpected temperature dependence. Based on these measurements we provide recommendations for improving $T_2$ in future experiments, allowing for higher fidelity operations and improved charge sensitivity.

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