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arXiv · 1603.08795

Atomically thin quantum light emitting diodes

Carmen Palacios Berraquero·Matteo Barbone·Dhiren M. Kara·Xiaolong Chen·Ilya Goykhman·Duhee Yoon·Anna K. Ott·Jan Beitner·Kenji Watanabe·Takashi Taniguchi·Andrea C. Ferrari·Mete Atatüre
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Abstract

Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

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Carmen Palacios Berraquero, Matteo Barbone, Dhiren M. Kara, Xiaolong Chen, Ilya Goykhman, Duhee Yoon, Anna K. Ott, Jan Beitner, Kenji Watanabe, Takashi Taniguchi, Andrea C. Ferrari, Mete Atatüre. 2016-03-29. Atomically thin quantum light emitting diodes. https://doi.org/10.1038/ncomms12978

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