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arXiv · 1604.00559

Relaxation-free and inertial switching in synthetic antiferromagnets subject to super-resonant excitation

B. C. Koop·T. Descamps·V. Korenivski
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Abstract

Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecond-range magnetic field pulses. Our detailed micromagnetic simulations, supported by analytical results, yield the parameter space where inertial switching and relaxation-free switching can be achieved in the system. We furthermore discuss the advantages of dynamic switching in synthetic antiferromagnets and, specifically, their relatively low-power switching as compared to that in single ferromagnetic particles. Finally, we show how excitation of spin-waves in the system can be used to significantly reduce the post-switching spin oscillations for practical device geometries.

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B. C. Koop, T. Descamps, V. Korenivski. 2016-04-02. Relaxation-free and inertial switching in synthetic antiferromagnets subject to super-resonant excitation. https://arxiv.org/abs/1604.00559

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