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arXiv · 1604.01864

Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

Yang-Yang Lv·Bin-Bin Zhang·Xiao Li·Shu-Hua Yao·Y. B. Chen·Jian Zhou·Shan-Tao Zhang·Ming-Hui Lu·Yan-Feng Chen
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Abstract

Recently, the extremely large magnetoresistance observed in transition metal telluride, like WTe$_2$, attracted much attention because of the potential applications in magnetic sensor. Here we report the observation of extremely large magnetoresistance as 3.0$\times$10$^4$ % measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (~1.4$\times$10$^4$ %) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the novel magnetic sensors.

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Yang-Yang Lv, Bin-Bin Zhang, Xiao Li, Shu-Hua Yao, Y. B. Chen, Jian Zhou, Shan-Tao Zhang, Ming-Hui Lu, Yan-Feng Chen. 2016-04-07. Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals. https://doi.org/10.1063/1.4953772

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