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arXiv · 1608.00323

Weak Localization and Electron-electron Interactions in Few Layer Black Phosphorus Devices

Yanmeng Shi·Nathaniel Gillgren·Timothy Espiritu·Son Tran·Jiawei Yang·Kenji Watanabe·Takahashi Taniguchi·Chun Ning Lau
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Abstract

Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (~T-0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.

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Yanmeng Shi, Nathaniel Gillgren, Timothy Espiritu, Son Tran, Jiawei Yang, Kenji Watanabe, Takahashi Taniguchi, Chun Ning Lau. 2016-08-01. Weak Localization and Electron-electron Interactions in Few Layer Black Phosphorus Devices. https://arxiv.org/abs/1608.00323

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