arXiv subjects

Yanmeng Shi

Publications and source records attributed to Yanmeng Shi.

14 recordsLinked to original sources

arXiv2026

Continuous correlated states and dual-flatness in a moir\'e heterostructure

Many-body effects in condensed matter yield novel quantum states when the electronic density of states is enhanced. A vivid example is flat bands, which suppress kinetic energy and let interactions dominate, when they are filled with an integer number of electrons in moire systems. Yet flat bands and commensurate fillings are not the only conditions for correlated phenomena. Situations may occur where the band structure develops locally enhanced density of states, leading to strong correlations even at non-integer fillings, although such cases often yield pseudogaps that make detection elusive. Here we demonstrate that small-angle twisted monolayer-bilayer graphene combines moire-induced global flat band and additional local band flattening. Their coexistence allows direct comparison of correlated effects. The global route stabilizes commensurate states, while the local mechanism produces nearly flat bands, lifting degeneracy and generating symmetry breaking at non-integer fillings, yet without opening a global gap. Because there is no global gapped signature, the system remains metallic, but the effect reveals itself in anomalous Hall responses, signaling time-reversal symmetry breaking and valley polarization. Our results demonstrate dual-flatness as a guiding principle, extending moire physics beyond commensurate fillings and identifying topological transport as a probe of gapless correlated metals.

cond-mat.str-el↗

arXiv2024

Anomalous Gate-tunable Capacitance in Van der Waals Heterostructures

The ferroelectricity emerging in non-polar graphene/hexagonal boron nitride (hBN) heterostructures has drawn considerable attention because of its fascinating properties and promising high-frequency electrical polarization switching. Yet, the underlying mechanism is still under debate. Here in twisted double bilayer graphene (TDBLG) aligned with its neighboring hBN, we observed two types of hysteresis - delayed hysteresis in top gate induced by the anomalous screening, and advanced hysteresis in back gate caused by the anomalous gate-tunable capacitance. To investigate the role played by moir\'e potential in the anomalous hysteresis, we studied a moir\'eless graphene heterostructure as control experiment. Unexpectedly, we observed exactly the same phenomena in this control device. Our findings suggest that the anomalous ferroelectricity in graphene/hBN heterostructures may originate from the dielectric material hBN, calling for further structural investigations on hBN. The observation of gate-tunable capacitance provides more insights in the mysterious ferroelectricity in graphene/hBN heterostructures, and should enable new design of memory devices such as memcapacitor based on tunable capacitance.

cond-mat.mes-hall↗

arXiv2020

Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene

Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insulating phase and two metallic phases, with 0, 1 and 2 helical edge states, respectively. These phases are accounted for by a theoretical model that relates their conductance to spin-polarization plateaus. Transitions between them arise from a competition among inter-layer hopping, electrostatic and exchange interaction energies. Our work highlights the complex competing symmetries and the rich quantum phases in few-layer graphene.

cond-mat.mes-hall↗

arXiv2020

Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene

Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.

cond-mat.mes-hall↗

arXiv2019

Electronic phase separation in topological surface states of rhombohedral graphite

Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states.

cond-mat.mes-hall↗

arXiv2019

Stacking Order in Graphite Films Controlled by Van der Waals Technology

In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked defines the electronic structure of the crystal, providing an exciting degree of freedom which can be exploited for designing graphitic materials with unusual properties including predicted high-temperature superconductivity and ferromagnetism. However, the lack of control of the stacking sequence limits most research to the stable ABA form of graphite. Here we demonstrate a strategy to control the stacking order using van der Waals technology. To this end, we first visualise the distribution of stacking domains in graphite films and then perform directional encapsulation of ABC-rich graphite crystallites with hexagonal boron nitride (hBN). We found that hBN-encapsulation which is introduced parallel to the graphite zigzag edges preserves ABC stacking, while encapsulation along the armchair edges transforms the stacking to ABA. The technique presented here should facilitate new research on the important properties of ABC graphite.

cond-mat.mes-hall↗

arXiv2018

Imaging Quantum Spin Hall Edges in Monolayer WTe2

A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have recently been reported for the first time in an atomically thin material, monolayer WTe2. Electrical transport measurements on exfoliated samples and scanning tunneling spectroscopy on epitaxially grown monolayer islands signal the existence of edge modes with conductance approaching the quantized value. Here, we directly image the local conductivity of monolayer WTe2 devices using microwave impedance microscopy, establishing beyond doubt that conduction is indeed strongly localized to the physical edges at temperatures up to 77 K and above. The edge conductivity shows no gap as a function of gate voltage, ruling out trivial conduction due to band bending or in-gap states, and is suppressed by magnetic field as expected. Interestingly, we observe additional conducting lines and rings within most samples which can be explained by edge states following boundaries between topologically trivial and non-trivial regions. These observations will be critical for interpreting and improving the properties of devices incorporating WTe2 or other air-sensitive 2D materials. At the same time, they reveal the robustness of the QSH channels and the potential to engineer and pattern them by chemical or mechanical means in the monolayer material platform.

cond-mat.mes-hall↗

arXiv2018

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering.

cond-mat.mes-hall↗

arXiv2018

Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene

As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as non-monotonic dependence of conductivity on charge density n and out-of-plane electric fieldD, anomalous quantum Hall sequences and Landau level crossings that evolve with n, D and B.

cond-mat.mes-hall↗

arXiv2017

Surface Transport and Quantum Hall Effect in Ambipolar Black Phosphorus Double Quantum Wells

Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and exciton condensation. Here we demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to tradition QWs, each 2D layer is ambipolar, and can be tuned into n-doped, p-doped or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with enhanced Lande g-factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double or wide QWs with unusual properties such as high anisotropy.

cond-mat.mes-hall↗

arXiv2016

Weak Localization and Electron-electron Interactions in Few Layer Black Phosphorus Devices

Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (~T-0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.

cond-mat.mes-hall↗

arXiv2016

Topological nodal-line fermions in ZrSiSe and ZrSiTe

The discovery of topological semimetal phase in three-dimensional (3D) systems is a new breakthrough in topological material research. Dirac nodal-line semimetal is one of the three topological semimetal phases discovered so far; it is characterized by linear band crossing along a line/loop, contrasted with the linear band crossing at discrete momentum points in 3D Dirac and Weyl semimetals. The study of nodal-line semimetal is still at initial stage; only three material systems have been verified to host nodal line fermions until now, including PbTaSe2, PtSn 4and ZrSiS. In this letter, we report evidence of nodal line fermions in ZrSiSe and ZrSiTe probed in de Haas - van Alphen (dHvA) quantum oscillations. Although ZrSiSe and ZrSiTe share similar layered structure with ZrSiS, our measurements of angular dependences of dHvA oscillations indicate the Fermi surface (FS) enclosing Dirac nodal line is of 2D character in ZiSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal line fermion density in ZrSi(S/Se) (~ 10^20-10^21 cm^-3) is much higher than the Dirac/Weyl fermion density of any known topological materials. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin layers through microexfoliation, which offers a promising platform to verify the predicted 2D topological insulator in the monolayer materials with ZrSiS-type structure

cond-mat.mtrl-sci↗

arXiv2016

Energy gaps and layer polarization of integer and fractional quantum Hall states in bilayer graphene

Owing to the spin, valley, and orbital symmetries, the lowest Landau level (LL) in bilayer graphene exhibits multicomponent quantum Hall ferromagnetism. Using transport spectroscopy, we investigate the energy gaps of integer and fractional quantum Hall states in bilayer graphene with controlled layer polarization. The state at filling factor ν=1 has two distinct phases: a layer polarized state that has a larger energy gap and is stabilized by high electric field, and a hitherto unobserved interlayer coherent state with a smaller gap that is stabilized by large magnetic field. In contrast, the ν=2/3 quantum Hall state and a feature at ν=1/2 are only resolved at finite electric field and large magnetic field. These results underscore the importance of controlling layer polarization in understanding the competing symmetries in the unusual QH system of BLG.

cond-mat.mes-hall↗

arXiv2014

Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures

As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >300 hours, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 $cm^2$/Vs. At low temperatures, we observe gate-tunable Shubnikov de Haas (SdH) magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ~2. The cyclotron mass of few-layer phosphorene holes is determined to increase from 0.25 to 0.31 $m_e$ as the Fermi level moves towards the valence band edge. Our results underscore the potential of few-layer phosphorene (FLP) as both a platform for novel 2D physics and an electronic material for semiconductor applications.

cond-mat.mes-hall↗