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arXiv · 1608.03900

Tunneling transport of mono- and few-layers magnetic van der Waals MnPS$_3$

Sungmin Lee·Ki-Young Choi·Sangik Lee·Bae Ho Park·Je-Geun Park
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Abstract

We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm.

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Sungmin Lee, Ki-Young Choi, Sangik Lee, Bae Ho Park, Je-Geun Park. 2016-08-12. Tunneling transport of mono- and few-layers magnetic van der Waals MnPS$_3$. https://doi.org/10.1063/1.4961211

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