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arXiv · 1608.07077

All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared

G. Capuzzo·D. Kysylychyn·R. Adhikari·T. Li·B. Faina·A. Tarazaga Martín-Luengo·A. Bonanni
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Abstract

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride and In-free efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al$_x$Ga$_{1-x}$N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg$_{k}$ complexes optically active in the telecommunication range of wavelengths.

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G. Capuzzo, D. Kysylychyn, R. Adhikari, T. Li, B. Faina, A. Tarazaga Martín-Luengo, A. Bonanni. 2016-08-25. All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared. https://doi.org/10.1038/srep42697

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