arXiv subjects

A. Bonanni

Publications and source records attributed to A. Bonanni.

At least 19 recordsLinked to original sources

arXiv2026

Surface-exciton enhanced SHG response in few-layer 2H-TMDC

We explore the nonlinear optical properties of few-layer MoS2 by means of polarization and laser-power-dependent measurements as well as ab initio techniques. While for even layer samples a weak second-harmonic (SH) signal can be attributed to the presence of surface defects or interface effects, our measurements resolve a layer-number dependent signal for odd-layer samples. For the excitation energy of 780 nm, we find that the SH intensity decreases steadily with the layer number. Our simulations demonstrate that this effect cannot be purely attributed to modifications of the band structure, but requires the inclusion of excitonic effects and can be explained by the increasing delocalization of excitons with increasing sample thickness.

physics.optics↗

arXiv2021

Femtosecond phononic coupling to both spins and charges in a room temperature antiferromagnetic semiconductor

Spintronics is postulated on the possibility to employ the magnetic degree of freedom of electrons for computation and couple it to charges. In this view, the combination of the high-frequency of spin manipulations offered by antiferromagnets, with the wide tunability of the electronic properties peculiar of semiconductors provides a promising and intriguing platform. Here we explore this scenario in $\alpha$-MnTe, which is a semiconductor antiferromagnetically ordered at room temperature. Relying on a Raman mechanism and femtosecond laser pulses, we drive degenerate modes of coherent optical phonons, which modulate the chemical bonds involved in the super-exchange interaction. The spectrally-resolved measurements of the transient reflectivity reveal a coherent modulation of the band-gap at the frequency of 5.3 THz. The detection of the rotation of the polarisation, typically associated with magneto-optical effects, shows coherent and incoherent contributions. Modelling how the ionic motion induced by the phonons affects the exchange interaction in the material, we calculate the photoinduced THz spin dynamics: the results predict both a coherent and incoherent response, the latter of which is consistent with the experimental observation. Our work demonstrates that the same phonon modes modulate both the charge and magnetic degree of freedom, suggesting the resonant pumping of phonons as a viable way to link spin and charge dynamics even in nonlinear regimes.

physics.optics↗

arXiv2021

Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$

Layered van der Waals semimetallic $T_\mathrm{d}$-WTe$_{2}$, exhibiting intriguing properties which include non-saturating extreme positive magnetoresistance (MR) and tunable chiral anomaly, has emerged as model topological type-II Weyl semimetal system. Here, $\sim$45 nm thick mechanically exfoliated flakes of $T_\mathrm{d}$-WTe$_{2}$ are studied $via$ atomic force microscopy, Raman spectroscopy, low-$T$/high-$\mu_{0}H$ magnetotransport measurements and optical reflectivity. The contribution of anisotropy of the Fermi liquid state to the origin of the large positive transverse $\mathrm{MR}_\perp$ and the signature of chiral anomaly of the type-II Weyl fermions are reported. The samples are found to be stable in air and no oxidation or degradation of the electronic properties are observed. A transverse $\mathrm{MR}_\perp$ $\sim$1200\,\% and an average carrier mobility of $5000$\, cm$^{2}$V$^{-1}$s$^{-1}$ at $T=5\,\mathrm{K}$ for an applied perpendicular field $\mu_{0}H_{\perp} = 7\,\mathrm{T}$ are established. The system follows a Fermi liquid model for $T\leq50\,\mathrm{K}$ and the anisotropy of the Fermi surface is concluded to be at the origin of the observed positive MR. The anisotropy of the electronic behaviour is also confirmed by optical reflectivity measurements. The relative orientation of the crystal axes and of the applied electric and magnetic fields is proven to give rise to the observed chiral anomaly in the in-plane magnetotransport.

cond-mat.mes-hall↗

arXiv2020

Unravelling the Local Crystallographic Structure of Ferromagnetic Ga$_y$Fe$_{4-y}$N Nanocrystals Embedded in GaN

In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystals embedded in wurtzite GaN thin layers is investigated in order to shed light onto the correlation between fabrication parameters, local structural arrangement and overall magnetic properties of the material system. It is found, that by adjusting the growth parameters and thus, the crystallographic surroundings, the Ga atoms can be induced to incorporate into 3$c$ positions at the faces of the fcc crystal lattice, reaching a maximum occupancy of 30\%. The magnetic response of the embedded nanocrystals is ferromagnetic with Curie temperature increasing from 450\,K to 500\,K with the Ga occupation. These results demonstrate the outstanding potential of the employed experimental protocol for unravelling the local structure of magnetic multi-phase systems, even when embedded in a matrix containing the same element under investigation.

cond-mat.mtrl-sci↗

arXiv2020

Low temperature and high magnetic field performance of a commercial piezo-actuator probed $via$ laser interferometry

The advances in the fields of scanning probe microscopy, scanning tunneling spectroscopy, point contact spectroscopy and point contact Andreev reflection spectroscopy to study the properties of conventional and quantum materials at cryogenic conditions have prompted the development of nanopositioners and nanoscanners with enhanced spatial resolution. Piezoelectric-actuator stacks as nanopositioners with working strokes $>100~\mu\mathrm{m}$ and positioning resolution $\sim$(1-10) nm are desirable for both basic research and industrial applications. However, information on the performance of most commercial piezoelectric-actuators in cryogenic environment and in the presence of magnetic fields in excess of 5\,T is generally not available. In particular, the magnitude, rate and the associated hysteresis of the piezo-displacement at cryogenic temperatures are the most relevant parameters that determine whether a particular piezoelectric-actuator can be used as a nanopositioner. Here, the design and realization of an experimental set-up based on interferometric techniques to characterize a commercial piezoelectric-actuator over a temperature range of $2~\mathrm{K}\leq{T}\leq260~\mathrm{K}$ and magnetic fields up to 6\,T is presented. The studied piezoelectric-actuator has a maximum displacement of $30~\mu\mathrm{m}$ at room temperature for a maximum driving voltage of 75\,V, which reduces to $1.2~\mu\mathrm{m}$ with an absolute hysteresis of $\left(9.1\pm3.3\right)~\mathrm{nm}$ at $T=2\,\mathrm{K}$. The magnetic field is shown to have no substantial effect on the piezo properties of the studied piezoelectric-actuator stack.

cond-mat.mtrl-sci↗

arXiv2020

Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage (V$_{\mathrm{th}}$ shift). Secondary ion mass spectroscopy, steady-state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration close to the channel as well as on the distance between the channel and the higher doped C region. Additionally, we note that experiments studying trapping should avoid large variations in the sheet carrier density (N$_{\mathrm{s}}$). This change in the N$_{\mathrm{s}}$ itself has a significant impact on the V$_{\mathrm{th}}$ shift. This experimental trends are also supported by a basic model and device simulation. Finally, the relationship between the yellow luminescence (YL) and the band edge (BE) ratio and the V$_{\mathrm{th}}$ shift is investigated. As long as the basic layer structure is not changed, the YL/BE ratio obtained from steady-state PL is demonstrated to be a valid method in predicting trap concentrations in the GaN channel layer.

cond-mat.mtrl-sci↗

arXiv2020

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$\delta$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $\gamma$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

cond-mat.mtrl-sci↗

arXiv2019

Ferromagnetic phase transition in topological crystalline insulator thin films: interplay of anomalous Hall angle and magnetic anisotropy

In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple dissipationless edge and surface conduction channels defined by a Chern number $\mathcal{C}\geq1$ was foreseen for the ferromagnetically ordered SnTe class of topological crystalline insulators (TCIs). From magnetotransport measurements on Sn$_{1-x}$Mn$_{x}$Te ($0.00\leq{x}\leq{0.08}$)(111) epitaxial thin films grown by molecular beam epitaxy on BaF$_{2}$ substrates, hole mediated ferromagnetism is observed in samples with $x\geq0.06$ and the highest $T_\mathrm{c}\sim7.5\,\mathrm{K}$ is inferred from an anomalous Hall behavior in Sn$_{0.92}$Mn$_{0.08}$Te. The sizable anomalous Hall angle $\sim$0.3 obtained for Sn$_{0.92}$Mn$_{0.08}$Te is one of the greatest reported for magnetic topological materials. The ferromagnetic ordering with perpendicular magnetic anisotropy, complemented by the inception of anomalous Hall effect in the Sn$_{1-x}$Mn$_{x}$Te layers for a thickness commensurate with the decay length of the top and bottom surface states, points at Sn$_{1-x}$Mn$_{x}$Te as a preferential platform for the realization of QAH states in ferromagnetic TCIs.

cond-mat.mes-hall↗

arXiv2018

Magnetotransport in phase-separated (Ga,Fe)N with $\gamma$'-Ga$_y$Fe$_{4-y}$N nanocrystals

The magnetotransport in phase-separated (Ga,Fe)N containing $\gamma$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $\gamma$'-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.

cond-mat.mtrl-sci↗

arXiv2016

Stretching magnetism with an electric field in a nitride semiconductor

By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that Mn doping turns GaN into a worthwhile semi-insulating material. Under these conditions, the magnetoelectric coupling may be driven by the inverse piezoelectric effect that stretches the elementary cell along the c axis and, thus, affects the magnitude of magnetic anisotropy. We develop a corresponding theory and show that it describes the experimentally determined dependence of magnetization on the electric field quantitatively with no adjustable parameters as a function of the magnetic field and temperature. In this way, our work bridges two research domains developed so far independently: piezoelectricity of wurtzite semiconductors and electrical control of magnetization in hybrid and composite magnetic structures containing piezoelectric components.

cond-mat.mtrl-sci↗

arXiv2016

All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride and In-free efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al$_x$Ga$_{1-x}$N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg$_{k}$ complexes optically active in the telecommunication range of wavelengths.

cond-mat.mtrl-sci↗

arXiv2016

Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite $n$-GaN:Si

Pure spin currents in semiconductors are essential for implementation in the next generation of spintronic elements. Heterostructures of III- nitride semiconductors are currently employed as central building-blocks for lighting and high-power devices. Moreover, the long relaxation times and the spin-orbit coupling (SOC) in these materials indicate them as privileged hosts for spin currents and related phenomena. Spin pumping is an efficient mechanism for the inception of spin current and its conversion into charge current in non-magnetic metals and semiconductors with Rashba SOC $via$ spin Hall effects. We report on the generation in $n$-GaN:Si\,--\,at room temperature and through spin pumping\,--\,of pure spin current, fundamental for the understanding of the spin dynamics in these non-centrosymmetric Rashba systems. We find for $n$-GaN:Si a spin Hall angle $θ_{\mathrm{SH}}$=$3.03\times10^{-3}$, exceeding by one order of magnitude those reported for other semiconductors, pointing at III-nitrides as particularly efficient spin current generators.

cond-mat.mes-hall↗

arXiv2015

Spinodal nanodecomposition in magnetically doped semiconductors

This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Monte Carlo simulations, is discussed together with extensive electron microscopy, synchrotron radiation, scanning probe, and ion beam methods that have been employed to visualize binodal and spinodal nanodecomposition (chemical phase separation) as well as nanoprecipitation (crystallographic phase separation) in a range of semiconductor compounds with a concentration of transition metal (TM) impurities beyond the solubility limit. The role of growth conditions, co-doping by shallow impurities, kinetic barriers, and surface reactions in controlling the aggregation of magnetic cations is highlighted. According to theoretical simulations and experimental results the TM-rich regions appear either in the form of nanodots (the {\em dairiseki} phase) or nanocolumns (the {\em konbu} phase) buried in the host semiconductor. Particular attention is paid to Mn-doped group III arsenides and antimonides, TM-doped group III nitrides, Mn- and Fe-doped Ge, and Cr-doped group II chalcogenides, in which ferromagnetic features persisting up to above room temperature correlate with the presence of nanodecomposition and account for the application-relevant magneto-optical and magnetotransport properties of these compounds. Finally, it is pointed out that spinodal nanodecomposition can be viewed as a new class of bottom-up approach to nanofabrication.

cond-mat.mtrl-sci↗

arXiv2015

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Polarization induced degenerate $n$-type doping with electron concentrations up to $\sim$10$^{20}$\,cm$^{-3}$ is achieved in graded Al$_{x}$Ga$_{1-x}$N layers ($x$: 0\%$\rightarrow$37\%) grown on unintentionally doped and on $n$-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy and electron energy loss spectroscopy confirm the gradient in the composition of the Al$_{x}$Ga$_{1-x}$N layers, while magnetotransport studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir.

cond-mat.mes-hall↗

arXiv2014

Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies

A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n-type wurtzite (Ga,Mn)N:Si films grown by metalorganic vapor phase epitaxy. Millikelvin magnetoresistance studies and their quantitative interpretation point to N0α < 40 meV, a value at least 5 times smaller than the one found with similar measurements on, e.g., $n$-(Zn,Mn)O. It is shown that this striking difference in the values of the s-d coupling between $n$-type III-V and II-VI dilute magnetic semiconductors can be explained by a theory that takes into account the acceptor character of Mn in III-V compounds.

cond-mat.mtrl-sci↗

arXiv2014

Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite (Ga,Fe)N

The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Optical transitions originating from all three free excitons A, B and C, specific to the wurtzite structure, have been observed and their evolution with the magnetic field determined. It is demonstrated that the magnitude of the exciton splittings evaluated from reflectivity-MCD data can be overestimated by more than a factor of 2, as compared to the values obtained by describing the polarization-resolved reflectivity spectra with appropriate dielectric functions. A series of model calculations shows that the quantitative inaccuracy of MCD originates from a substantial influence of the magnetization-dependent exchange interactions not only on the spin splittings of excitons but also upon their linewidth and oscillator strength. At the same time, a method is proposed that allows to evaluate the field and temperature dependencies of the magnetization from MCD spectra. The accurate values of the excitonic splittings and of the magnetization reported here substantiate the magnitudes of the apparent $sp-d$ exchange integrals in (Ga,Fe)N previously determined.

cond-mat.mtrl-sci↗

arXiv2014

Experimental determination of Rashba spin-orbit coupling in wurtzite $n$-GaN:Si

Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajectories. The Rashba parameter $α_{\text{R}}\,=\,(4.5 \pm 1)$ meV$Å$ is determined, and it is shown that in the previous studies of electrons adjacent to GaN/(Al,Ga)N interfaces, bulk inversion asymmetry was dominant over structural inversion asymmetry. The comparison of experimental and theoretical values of $α_{\text{R}}$ across a series of wurtzite semiconductors is presented as a test of current relativistic ab initio computation schemes. It is found that electron-electron scattering with small energy transfer accounts for low temperature decoherence in these systems.

cond-mat.mes-hall↗

arXiv2013

Magnetooptical properties of (Ga,Fe)N layers

Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed.

cond-mat.mtrl-sci↗