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arXiv · 1610.05571

Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon

X. Mi·J. V. Cady·D. M. Zajac·J. Stehlik·L. F. Edge·J. R. Petta
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Abstract

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g_c/2pi = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.

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X. Mi, J. V. Cady, D. M. Zajac, J. Stehlik, L. F. Edge, J. R. Petta. 2016-10-18. Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon. https://doi.org/10.1063/1.4974536

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