Light matter interaction in transition metal dichalcogenides and their heterostructures

Abstract

The investigation of 2D van der Waals (vdW) materials is a vibrant, fast moving and still growing interdisciplinary area of research. 2D vdW materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers with a variety of different electronic, optical and mechanical properties. A very prominent class of 2D materials are transition metal dichalcogenides (TMDs) and amongst them particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-)catalytic and mechanical stability and exotic many body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light matter interaction providing a high sun light absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments and access to excitonic phenomena in vdW heterostructures. This review focuses on the light matter interaction in MoS2, WS2, MoSe2, and WSe2 that is dictated by the materials complex dielectric functions and on the multiplicity of studying the first order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. 2D materials provide an interesting platform to stack them into vdW heterostructures without the limitation of lattice mismatch resulting in novel devices for application but also to study exotic many body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting TMDs and their heterostructures for applications in optoelectronic devices will be examined and routes to study emergent fundamental problems and many-body quantum phenomena under excitations with photons will be discussed.