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arXiv · 1701.03117

Carrier driven coupling in ferromagnetic oxide heterostructures

Ching-Hao Chang·Sujit Das·Sanjeev Kumar·R. Ganesh
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Abstract

Transition metal oxides are well known for their complex magnetic and electrical properties. When brought together in heterostructure geometries, they show particular promise for spintronics and colossal magnetoresistance applications. In this letter, we propose a new mechanism for the coupling between layers of itinerant ferromagnetic materials in heterostructures. The coupling is mediated by charge carriers that strive to maximally delocalize through the heterostructure to gain kinetic energy. In doing so, they force a ferromagnetic or antiferromagnetic coupling between the constituent layers. To illustrate this, we focus on heterostructures composed of SrRuO$_3$ and La$_{1-x}$A$_{x}$MnO$_3$ (A=Ca/Sr). Our mechanism is consistent with antiferromagnetic alignment that is known to occur in multilayers of SrRuO$_3$-La$_{1-x}$A$_{x}$MnO$_3$. To support our assertion, we present a minimal Kondo-lattice model which reproduces the known magnetization properties of such multilayers. In addition, we discuss a quantum well model for heterostructures and argue that the spin-dependent density of states determines the nature of the coupling. As a smoking gun signature, we propose that bilayers with the same constituents will oscillate between ferromagnetic and antiferromagnetic coupling upon tuning the relative thicknesses of the layers.

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Ching-Hao Chang, Sujit Das, Sanjeev Kumar, R. Ganesh. 2017-01-11. Carrier driven coupling in ferromagnetic oxide heterostructures. https://doi.org/10.1103/physrevb.96.184408

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