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arXiv · 1702.01869

Resonant spin transfer torque nano-oscillators

Abhishek Sharma·Ashwin A Tulapurkar·Bhaskaran Muralidharan
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Abstract

Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present device designs geared toward a high microwave output power and an efficient conversion of the d.c. input power. We attribute these robust qualities to the resulting non-trivial spin current profiles and the ultra high tunnel magnetoresistance, both arising from resonant spin filtering. The device designs are based on the nonequilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around $775\%$ and an efficiency enhancement of over $1300\%$ in comparison with typical trilayer designs. We also rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. This work sets stage for pentalyer spin transfer torque nano-oscillator device designs that extenuate most of the issues faced by the typical trilayer designs.

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Abhishek Sharma, Ashwin A Tulapurkar, Bhaskaran Muralidharan. 2017-02-07. Resonant spin transfer torque nano-oscillators. https://doi.org/10.1103/physrevapplied.8.064014

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