arXiv subjects

Ashwin A Tulapurkar

Publications and source records attributed to Ashwin A Tulapurkar.

3 recordsLinked to original sources

arXiv2025

Exceptionally high Verdet constant in gold nanodisc arrays

Magneto-optical effects in non-magnetic noble metals can be greatly enhanced by leveraging the in-plane Lorentz force at engineered plasmonic resonances. We demonstrate a 2D array of gold nanodiscs designed to host a hybrid resonance of localized plasmon and surface lattice modes. The structure exhibits a Verdet constant of 1.98e6 deg/T.m, corresponding to a Faraday rotation of -0.15 deg at a 1 T magnetic field. This Verdet constant represents a 15-fold enhancement over unpatterned gold and is highly competitive with many plasmon-enhanced diamagnetic nanostructures. These findings offer new opportunities for harnessing strong magneto-plasmonic effects in optoelectronic devices by patterning common non-magnetic metals.

physics.optics↗

arXiv2017

Resonant spin transfer torque nano-oscillators

Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present device designs geared toward a high microwave output power and an efficient conversion of the d.c. input power. We attribute these robust qualities to the resulting non-trivial spin current profiles and the ultra high tunnel magnetoresistance, both arising from resonant spin filtering. The device designs are based on the nonequilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around $775\%$ and an efficiency enhancement of over $1300\%$ in comparison with typical trilayer designs. We also rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. This work sets stage for pentalyer spin transfer torque nano-oscillator device designs that extenuate most of the issues faced by the typical trilayer designs.

cond-mat.mes-hall↗

arXiv2014

Enhancement of Spin-transfer torque switching via resonant tunneling

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

cond-mat.mes-hall↗