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arXiv · 1702.04470

High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

Anamika Singh Pratiyush·Sriram Krishnamoorthy·Swanand Vishnu Solanke·Zhanbo Xia·Rangarajan Muralidharan·Siddharth Rajan·Digbijoy N. Nath
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Abstract

In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current < 10 nA at 20 V and showed no persistent photoconductivity (PPC) as evident from the sharp transients with a photo-to-dark current ratio > 103. These results represent the state-of-art performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector.

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Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke, Zhanbo Xia, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N. Nath. 2017-02-15. High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector. https://doi.org/10.1063/1.4984904

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