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arXiv · 1703.04725

Narrow-band anisotropic electronic structure of ReS$_2$

D. Biswas·A. M. Ganose·R. Yano·J. M. Riley·L. Bawden·O. J. Clark·J. Feng·L. Collins-Mcintyre·W. Meevasana·T. K. Kim·M. Hoesch·J. E. Rault·T. Sasagawa·D. O. Scanlon·P. D. C. King
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Abstract

We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along $k_z$. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS$_2$, and how it can be expected to evolve when thinned to a single layer.

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D. Biswas, A. M. Ganose, R. Yano, J. M. Riley, L. Bawden, O. J. Clark, J. Feng, L. Collins-Mcintyre, W. Meevasana, T. K. Kim, M. Hoesch, J. E. Rault, T. Sasagawa, D. O. Scanlon, P. D. C. King. 2017-03-14. Narrow-band anisotropic electronic structure of ReS$_2$. https://doi.org/10.1103/physrevb.96.085205

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