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arXiv · 1703.07437

Hybrid straintronics and voltage-controlled-magnetic-anisotropy: Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field

Justine L. Drobitch·Md Ahsanul Abeed·Supriyo Bandyopadhyay
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Abstract

We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane magnetic field. The soft layer of the MTJ is a two-phase (magnetostrictive/piezoelectric) multiferroic which is electrically stressed to produce an effective in-plane magnetic field around which the magnetization precesses to complete a flip when the VCMA voltage pulse duration and the stress duration are independently adjusted to obtain a high switching probability. A two-terminal energy-efficient cell, that is compatible with crossbar architecture and high cell density, is designed.

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Justine L. Drobitch, Md Ahsanul Abeed, Supriyo Bandyopadhyay. 2017-03-27. Hybrid straintronics and voltage-controlled-magnetic-anisotropy: Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field. https://arxiv.org/abs/1703.07437

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