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arXiv · 1704.03313

Multibit memory operation of metal-oxide bi-layer memristors

Spyros Stathopoulos·Ali Khiat·Maria Trapatseli·Simone Cortese·Alexandrou Serb·Ilia Valov·Themis Prodromakis
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Abstract

In this work, we evaluate a multitude of metal-oxide bi-layers and demonstrate the benefits from increased memory stability via multibit memory operation. We introduce a programming methodology that allows for operating metal-oxide memristive devices as multibit memory elements with highly packed yet clearly discernible memory states. We finally demonstrate a 5.5-bit memory cell (47 resistive states) with excellent retention and power consumption performance. This paves the way for neuromorphic and non-volatile memory applications.

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Spyros Stathopoulos, Ali Khiat, Maria Trapatseli, Simone Cortese, Alexandrou Serb, Ilia Valov, Themis Prodromakis. 2017-04-04. Multibit memory operation of metal-oxide bi-layer memristors. https://arxiv.org/abs/1704.03313

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