Strong dopant dependence of electric transport in ion-gated MoS2

Erik Piatti; Qihong Chen; Jianting Ye

doi:10.1063/1.4992477

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arXiv · 1704.07618

Strong dopant dependence of electric transport in ion-gated MoS2

Erik Piatti·Qihong Chen·Jianting Ye

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Abstract

We report modifications of the temperature-dependent transport properties of $\mathrm{MoS_2}$ thin flakes via field-driven ion intercalation in an electric double layer transistor. We find that intercalation with $\mathrm{Li^+}$ ions induces the onset of an inhomogeneous superconducting state. Intercalation with $\mathrm{K^+}$ leads instead to a disorder-induced incipient metal-to-insulator transition. These findings suggest that similar ionic species can provide access to different electronic phases in the same material.

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Erik Piatti, Qihong Chen, Jianting Ye. 2017-04-25. Strong dopant dependence of electric transport in ion-gated MoS2. https://doi.org/10.1063/1.4992477

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