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arXiv · 1705.06409

A Table-Top Formation of Bilayer Quasi-Free-Standing Epitaxial-Graphene on SiC(0001) by Microwave Annealing in Air

Kwan-Soo Kim·Goon-Ho Park·Hirokazu Fukidome·Someya Takashi·Iimori Takushi·Komori Fumio·Matsuda Iwao·Maki Suemitsu
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Abstract

We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer is decoupled from the SiC substrate and becomes the second EG layer as confirmed by the low energy electron diffraction, high-resolution transmission electron microscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. The most likely mechanism of the decoupling is given by the oxidation of the SiC surface, which is quite similar to what happens in conventional annealing method in air but with a process time by more than one order of magnitude less.

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Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Someya Takashi, Iimori Takushi, Komori Fumio, Matsuda Iwao, Maki Suemitsu. 2017-05-18. A Table-Top Formation of Bilayer Quasi-Free-Standing Epitaxial-Graphene on SiC(0001) by Microwave Annealing in Air. https://arxiv.org/abs/1705.06409

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