Iimori Takushi | Searcharxiv

arXiv2017

A Table-Top Formation of Bilayer Quasi-Free-Standing Epitaxial-Graphene on SiC(0001) by Microwave Annealing in Air

We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer is decoupled from the SiC substrate and becomes the second EG layer as confirmed by the low energy electron diffraction, high-resolution transmission electron microscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. The most likely mechanism of the decoupling is given by the oxidation of the SiC surface, which is quite similar to what happens in conventional annealing method in air but with a process time by more than one order of magnitude less.

cond-mat.mes-hall↗

arXiv2016

Direct Evidence of Metallic Bands in a Monolayer Boron Sheet

The search for metallic boron allotropes has attracted great attention in the past decades and recent theoretical works predict the existence of metallicity in monolayer boron. Here, we synthesize the \b{eta}12-sheet monolayer boron on a Ag(111) surface and confirm the presence of metallic boron-derived bands using angle-resolved photoemission spectroscopy. The Fermi surface is composed of one electron pocket at the S point and a pair of hole pockets near the X point, which is supported by the first-principles calculations. The metallic boron allotrope in \b{eta}12 sheet opens the way to novel physics and chemistry in material science.

cond-mat.mtrl-sci↗