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arXiv · 1706.05464

A Thermodynamic Perspective of Negative-capacitance Field-effect-transistors

Sou-Chi Chang·Uygar E. Avci·Dmitri. E. Nikonov·Ian A. Young
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Abstract

Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and the polarization dynamics according to Landau-Khalatnikov (LK) equation. These equations are self-consistently solved with the one-dimensional metal-oxide-semiconductor (MOS) structure electrostatics and the drift-diffusion solution for the current in the semiconductor channel. Numerical simulations demonstrate, depending on the ferroelectric (FE) thickness, both regimes of hysteresis switching (relevant for a non-volatile memory) and of higher on-currents and steeper subthreshold slope (SS) with a negligible hysteresis (relevant for logic) via the negative capacitance effect.

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Sou-Chi Chang, Uygar E. Avci, Dmitri. E. Nikonov, Ian A. Young. 2017-06-17. A Thermodynamic Perspective of Negative-capacitance Field-effect-transistors. https://doi.org/10.1109/jxcdc.2017.2750108

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