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arXiv · 1706.10137

High resolution structural characterisation of laser-induced defect clusters inside diamond

Patrick S. Salter·Martin J. Booth·Arnaud Courvoisier·David A. J. Moran·Donald A. MacLaren
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Abstract

Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides and defects within diamond. We present a transmission electron microscopy (TEM) study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy (EELS) indicates that the majority of the irradiated region remains as $sp^3$ bonded diamond. Electrically-conductive paths are attributed to the formation of multiple nano-scale, $sp^2$-bonded graphitic wires and a network of strain-relieving micro-cracks.

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Patrick S. Salter, Martin J. Booth, Arnaud Courvoisier, David A. J. Moran, Donald A. MacLaren. 2017-06-16. High resolution structural characterisation of laser-induced defect clusters inside diamond. https://doi.org/10.1063/1.4993118

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