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arXiv · 1707.07917

Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions

T. Huong Dang·D. Quang To·E. Erina·T. L. Hoai Nguyen·V. Safarov·H. Jaffres·H. -J. Drouhin
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Abstract

We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.

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T. Huong Dang, D. Quang To, E. Erina, T. L. Hoai Nguyen, V. Safarov, H. Jaffres, H. -J. Drouhin. 2017-07-25. Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions. https://doi.org/10.1016/j.jmmm.2017.12.065

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