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arXiv · 1707.09181

High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$

Marco Busch·Olivio Chiatti·Sergio Pezzini·Steffen Wiedmann·Jaime Sánchez-Barriga·Oliver Rader·Lada V. Yashina·Saskia F. Fischer
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Abstract

Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in bulk Bi$_2$Se$_3$ with a high electron density $n$ of about $2\!\cdot\!10^{19}$ cm$^{-3}$. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi$_2$Se$_3$ and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.

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Marco Busch, Olivio Chiatti, Sergio Pezzini, Steffen Wiedmann, Jaime Sánchez-Barriga, Oliver Rader, Lada V. Yashina, Saskia F. Fischer. 2017-07-28. High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$. https://arxiv.org/abs/1707.09181

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