arXiv subjects

Steffen Wiedmann

Publications and source records attributed to Steffen Wiedmann.

17 recordsLinked to original sources

arXiv2026

Magnetothermopower and particle-hole symmetry in a cuprate strange metal

Here, we report magnetothermopower measurements on overdoped (Bi,Pb)2(Sr,La)2CuO6+delta (Bi2201) single crystals in magnetic fields up to 35 T. Whereas the temperature dependence of the zero-field Seebeck coefficient S(T) can be captured using Boltzmann transport theory, the field-dependent response S(H) cannot. Instead, the magnetothermopower contains a large additional contribution whose field and temperature dependence is consistent with the presence of short-range superconducting order well above Tc. Combined with earlier Hall and magnetoresistance results, these data imply that the overdoped cuprate strange metal contains two transport sectors with distinct particle-hole symmetry: a conventional particle-hole-asymmetric Fermi-liquid (FL) contribution governing the Hall effect and the zero-field thermopower, and a nearly particle-hole-symmetric sector dominating the anomalous longitudinal magnetotransport. We formulate a phenomenological real-space model in which disconnected FL islands are embedded in a compensated Dirac liquid of phase-incoherent d-wave Bogoliubov quasiparticles. This picture reconciles conventional zero-field transport with anomalous magnetothermopower and magnetoresistance and offers a concrete framework for thinking about strange metallicity in overdoped cuprates.

cond-mat.supr-con↗

arXiv2026

Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl

Interaction between different two dimensional materials can give rise to many exotic physical phenomena which are rarely observed in intrinsic materials. Recently, several theoretical and experimental works have revealed that magnetic proximity effect between pristine graphene and magnetic substrates can lead to the emergence of quantum anomalous Hall states and quantum spin Hall states. However, interplay between correlated states in graphene-based systems and magnetic materials has seldom been studied. Here we perform the transport measurement at ultrahigh magnetic field of twisted double bilayer graphene (TDBG) on CrOCl (COC) substrate, which is an antiferromagnetic material. Instead of a magnetic-exchange effect on graphene, we observe an enhanced correlated insulating state at half-filling factor of TDBG as a result of the charge-transfer process between TDBG and COC. The temperature and magnetic field dependence of this enhanced state are further studied. Our results demonstrate the influence of charge-related effect at the interface, and shed a light on a new route for manipulating the correlated states in graphene-based moir\'e systems using interfacial engineering.

cond-mat.mes-hall↗

arXiv2025

Long-range electron coherence in Kagome metals

The wave-like nature of electrons lies at the core of quantum mechanics, distinguishing them from classical particles. Landmark experiments have revealed phase coherence of mobile electrons within solids, such as Aharonov-Bohm interference in mesoscopic rings. However, this coherence is typically limited by numerous environmental interactions. Controlling and ideally mitigating such decoherence remains a central challenge in condensed matter physics. Here, we report magnetoresistance oscillations in mesoscopic pillars of the Kagome metal CsV$_3$Sb$_5$ for fields applied parallel to the Kagome planes. Their periodicity is independent of materials parameters, simply given by the number of flux quanta $h/e$ threading between adjacent Kagome layers akin to an atomic-scale Aharonov-Bohm interferometer. Intriguingly they occur under conditions not favorable for typical interference in solids, at temperatures above 20 K and in micrometer-scale devices well exceeding the single-particle mean free path. Further, the oscillations exhibit non-analytic field-angle dependence and scale consistently with a broad range of key electronic responses in CsV$_3$Sb$_5$, pointing to a cooperative mechanism that establishes intrinsic coherence. Our findings provide new insights into the debated origin of correlated order in CsV$_3$Sb$_5$ and establish Kagome metals as a promising platform for interaction-stabilized long-range electron coherence - crucial for both fundamental studies and technological advancements in quantum interference in metallic systems.

cond-mat.str-el↗

arXiv2024

High-field superconductivity from atomic-scale confinement and spin-orbit coupling at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces

We study the superconducting critical fields of two-dimensional electron systems at (111)$\mathrm{LaAlO_3/KTaO_3}$ interfaces as a function of electrostatic back-gating. Our work reveals inplane critical fields of unprecedented magnitudes at oxide interfaces. By comparing the critical fields in-plane and out-of-plane we discover an extremely anisotropic superconductor with an effective thickness below 1 nm and a 12-fold violation of the Chandrasekhar-Clogston paramagnetic limit. The analysis of magneto-transport indicates that the enhancement of the critical fields is due to an exceptionally thin superconducting layer and to a paramagnetic susceptibility suppressed by spin-orbit scattering.

cond-mat.supr-con↗

arXiv2024

Strongly correlated Hofstadter subbands in minimally twisted bilayer graphene

Moiré superlattice in twisted bilayer graphene has been proven to be a versatile platform for exploring exotic quantum phases. Extensive investigations have been invoked focusing on the zero-magnetic-field phase diagram at the magic twist angle around $θ=1.1\degree$, which has been indicated to be an exclusive regime for exhibiting flat band with the interplay of strong electronic correlation and untrivial topology in the experiment so far. In contrast, electronic bands in non-magic-angle twisted bilayer graphene host dominant electronic kinetic energy compared to Coulomb interaction. By quenching the kinetic energy and enhancing Coulomb exchange interactions by means of an applied perpendicular magnetic field, here we unveil gapped flat Hofstadter subbands at large magnetic flux that yield correlated insulating states in minimally twisted bilayer graphene at $θ=0.41\degree$. These states appear with isospin symmetry breaking due to strong Coulomb interactions. Our work provides a platform for studying the phase transition of the strongly correlated Hofstadter spectrum.

cond-mat.mes-hall↗

arXiv2024

From orbital to paramagnetic pair breaking in layered superconductor 2H-NbS$_2$

The superconducting transition metal dichalcogenides 2H-NbSe$_2$ and 2H-NbS$_2$ are intensively studied on account of their unique electronic properties such as Ising superconductivity, found in multi- and monolayers, with upper critical fields beyond the Pauli limit. Even in bulk crystals, there are reports of multiband superconductivity and exotic states, such as the Fulde-Ferrell-Larkin-Ovchinnikov phase. In this work, we investigate the superconducting properties of 2H-NbS$_2$ through a detailed high-field mapping of the phase diagram by means of magnetotransport and magnetostriction experiments. We compare the phase diagram between bulk crystals and a 6~nm thick flake of 2H-NbS$_2$ and find a drastically enhanced Maki parameter in the flake, signifying a change of the relevant pair breaking mechanism from orbital to paramagnetic pair breaking, which we attribute to an effect of enhanced spin-orbit coupling.

cond-mat.supr-con↗

arXiv2024

Quantum Hall effect in a CVD-grown oxide

Two-dimensional electron systems (2DES) are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or magnetism. The realization of such quantum phases in 2D oxides heavily relies on dedicated heterostructure growths. Here we show the integer quantum Hall effect achieved in chemical vapor deposition grown Bi2O2Se - a representative member of a more accessible oxide family. A single or few sub-band 2DES can be prepared in thin films of Bi2O2Se, where the film thickness acts as the sole design parameter and the sub-band occupation is determined by the electric field effect. This new oxide platform exhibits characteristic advantages in structural flexibility due to its layered nature, making it suitable for scalable growth. The unique small mass distinguishes Bi2O2Se from other high-mobility oxides, providing a new platform for exploring quantum Hall physics in 2D oxides.

cond-mat.mes-hall↗

arXiv2023

Orbital Fulde-Ferrell-Larkin-Ovchinnikov state in an Ising superconductor

The conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state relies on the Zeeman effect of an external magnetic field to break time-reversal symmetry, forming a state of finite-momentum Cooper pairing. In superconductors with broken inversion symmetries, the Rashba or Ising-type spin-orbit coupling (SOC) can interact with either the Zeeman or the orbital effect of magnetic fields, extending the range of possible FFLO states, though evidence for these more exotic forms of FFLO pairing has been lacking. Here we report the discovery of an unconventional FFLO state induced by coupling the Ising SOC and the orbital effect in multilayer 2H-NbSe2. Transport measurements show that the translational and rotational symmetries are broken in the orbital FFLO state, providing the hallmark signatures of finite momentum cooper pairings. We establish the entire orbital FFLO phase diagram, consisting of normal metal, uniform Ising superconducting phase, and a six-fold orbital FFLO state. This study highlights an alternative route to finite-momentum superconductivity and provides a universal mechanism to prepare orbital FFLO states in similar materials with broken inversion symmetries.

cond-mat.supr-con↗

arXiv2023

Distinct switching of chiral transport in the kagome metals KV$_3$Sb$_5$ and CsV$_3$Sb$_5$

The kagome metals AV$_3$Sb$_5$ (A=K,Rb,Cs) present an ideal sandbox to study the interrelation between multiple coexisting correlated phases such as charge order and superconductivity. So far, no consensus on the microscopic nature of these states has been reached as the proposals struggle to explain all their exotic physical properties. Among these, field-switchable electric magneto-chiral anisotropy (eMChA) in CsV$_3$Sb$_5$ provides intriguing evidence for a rewindable electronic chirality, yet the other family members have not been likewise investigated. Here, we present a comparative study of magneto-chiral transport between CsV$_3$Sb$_5$ and KV$_3$Sb$_5$. Despite their similar electronic structure, KV$_3$Sb$_5$ displays negligible eMChA, if any, and with no field switchability. This is in stark contrast to the non-saturating eMChA in CsV$_3$Sb$_5$ even in high fields up to 35 T. In light of their similar band structures, the stark difference in eMChA suggests its origin in the correlated states. Clearly, the V kagome nets alone are not sufficient to describe the physics and the interactions with their environment are crucial in determining the nature of their low-temperature state.

cond-mat.str-el↗

arXiv2023

Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few high magnetic field facilities. Here, we report on the quantum Hall effect in graphene encapsulated by the ferroelectric insulator CuInP2S6. Electrostatic gating of the graphene channel enables the Fermi energy to be tuned so that electrons in the localized states of the insulator are in equilibrium with the current-carrying, delocalized states of graphene. Due to the presence of strongly bound states in this hybrid system, a quantum Hall plateau can be achieved at room temperature in relatively modest magnetic fields. This phenomenon offers the prospect for the controlled manipulation of the quantum Hall effect at room temperature.

cond-mat.mes-hall↗

arXiv2023

Phonon-mediated room-temperature quantum Hall transport in graphene

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.

cond-mat.mes-hall↗

arXiv2021

Evidence for strong electron correlations in a non-symmorphic Dirac semimetal

Metallic iridium oxides (iridates) provide a fertile playground to explore new phenomena resulting from the interplay between topological protection, spin-orbit and electron-electron interactions. To date, however, few studies of the low energy electronic excitations exist due to the difficulty in synthesising crystals with sufficiently large carrier mean-free-paths. Here, we report the observation of Shubnikov-de Haas quantum oscillations in high-quality single crystals of monoclinic SrIrO$_3$ in magnetic fields up to 35~T. Analysis of the oscillations reveals a Fermi surface comprising multiple small pockets with effective masses up to 4.5 times larger than the calculated band mass. \textit{Ab-initio} calculations reveal robust linear band-crossings at the Brillouin zone boundary, due to its non-symmorphic symmetry, and overall we find good agreement between the angular dependence of the oscillations and the theoretical expectations. Further evidence of strong electron correlations is realized through the observation of signatures of non-Fermi liquid transport as well as a large Kadowaki-Woods ratio. These collective findings, coupled with knowledge of the evolution of the electronic state across the Ruddlesden-Popper iridate series, establishes monoclinic SrIrO$_3$ as a topological semimetal on the boundary of the Mott metal-insulator transition.

cond-mat.str-el↗

arXiv2021

Insulator-to-Metal Crossover near the Edge of the Superconducting Dome in Nd$_{1-x}$Sr$_x$NiO$_2$

We report a systematic magnetotransport study of superconducting infinite-layer nickelate thin films Nd$_{1-x}$Sr$_x$NiO$_2$ with $0.15 \leq x \leq 0.225$. By suppressing superconductivity with out-of-plane magnetic fields up to 37.5 T, we find that the normal state resistivity of Nd$_{1-x}$Sr$_x$NiO$_2$ is characterized by a crossover from a metallic $T^2$-behavior to an insulating log(1/$T$)-behavior for all $x$ except $x = 0.225$, at which the resistivity is predominantly metallic. The log(1/$T$)-behavior is found to be robust against magnetic fields, inconsistent with scenarios involving localization or Kondo scattering, and points to an anomalous insulating state possibly driven by strong correlations. In the metallic state, we find no evidence for non-Fermi-liquid behavior arising from proximity to a putative quantum critical point located inside the superconducting dome.

cond-mat.supr-con↗

arXiv2020

Giant Seebeck effect across the field-induced metal-insulator transition of InAs

Lightly doped III-V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal-insulator transition, triggered by the magnetic field, leads to a depletion of carrier concentration by more than one order of magnitude. Here, we show that this transition is accompanied by a two-hundred-fold enhancement of the Seebeck coefficient which becomes as large as 11.3mV.K$^{-1}\approx 130\frac{k_B}{e}$ at T=8K and B=29T. We find that the magnitude of this signal depends on sample dimensions and conclude that it is caused by phonon drag, resulting from a large difference between the scattering time of phonons (which are almost ballistic) and electrons (which are almost localized in the insulating state). Our results reveal a path to distinguish between possible sources of large thermoelectric response in other low density systems pushed beyond the quantum limit.

cond-mat.mtrl-sci↗

arXiv2017

High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$

Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in bulk Bi$_2$Se$_3$ with a high electron density $n$ of about $2\!\cdot\!10^{19}$ cm$^{-3}$. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi$_2$Se$_3$ and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.

cond-mat.mtrl-sci↗

arXiv2015

Temperature-driven transition from a semiconductor to a topological insulator

We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs.

cond-mat.mes-hall↗

arXiv2007

Quantum Spin Hall Insulator State in HgTe Quantum Wells

Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e^2/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nm, is also independently determined from the magnetic field induced insulator to metal transition. These observations provide experimental evidence of the quantum spin Hall effect.

cond-mat.mes-hall↗