arXiv · 1708.04130
Photo-spin voltaic effect and photo-magnetoresistance in proximized platinum
Abstract
Spin orbit coupling in heavy metals allows conversion of unpolarized light into an open-circuit voltage. We experimentally prove that this photo-spin voltaic effect is due to photo-excitation of carriers in the proximized layer and can exist for light in the visible range. While carrying out the experiment, we discovered that, in closed-circuit conditions, the anisotropic magnetoresistance of the proximized metal is a function of the light intensity. We name this effect photo-magnetoresistance. A magneto-transport model is presented that describes the change of magnetoresistance as a function of the light intensity.
Explore related subjects
Keep this discovery
D. Li, A. Ruotolo. 2017-08-01. Photo-spin voltaic effect and photo-magnetoresistance in proximized platinum. https://doi.org/10.1063/1.5002573
Cite the original work for its findings. Save a collection to share your selection of sources.