arXiv subjects

A. Ruotolo

Publications and source records attributed to A. Ruotolo.

4 recordsLinked to original sources

arXiv2017

Photo-spin voltaic effect and photo-magnetoresistance in proximized platinum

Spin orbit coupling in heavy metals allows conversion of unpolarized light into an open-circuit voltage. We experimentally prove that this photo-spin voltaic effect is due to photo-excitation of carriers in the proximized layer and can exist for light in the visible range. While carrying out the experiment, we discovered that, in closed-circuit conditions, the anisotropic magnetoresistance of the proximized metal is a function of the light intensity. We name this effect photo-magnetoresistance. A magneto-transport model is presented that describes the change of magnetoresistance as a function of the light intensity.

cond-mat.str-el↗

arXiv2016

Excitation of spin wave modes of a magnetic dot existing in a shifted vortex-state by an out-of-plane oscillating magnetic field

Excitation of spin wave modes of a vortex-state magnetic dot by an out-of-plane oscillating magnetic field is studied numerically in the presence of a static in-plane magnetic field. It is shown, that the application of the in-plane static field shifts the position of the vortex core and leads to the separate excitation of different azimuthal dipolar spin waves my perpendicular oscillating field. It is also shown that the excited dipolar azimuthal spin waves excite the gyrotropic mode of the vortex core rotation and, depending on the excitation frequency, cause a significant modification (increase or decrease) of the apparent dissipation rate of the gyrotropic mode. The last effect can be explained by the nonlinear parametric interaction between the gyrotropic mode and the dipolar spin wave modes with different azimuthal indices.

cond-mat.mes-hall↗

arXiv2008

Unification of bulk and interface electroresistive switching in oxide systems

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.

cond-mat.str-el↗

arXiv2007

High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates

We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10^20 cm^(-3). Moreover, the junctions show hysteretic current-voltage characteristics.

cond-mat.str-el↗