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arXiv · 1710.07483

Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS$_2$

Taro Wakamura·Francesco Reale·Pawel Palczynski·Sophie Guéron·Cecilia Mattevi·Hélène Bouchiat
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Abstract

We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy ($E_{\rm so}$) higher than 10 meV. The symmetry of the induced SOI is also discussed, and the dominant $z$ $\rightarrow$ $-z$ symmetric SOI can only explain the experimental results. Spin relaxation by the Elliot-Yafet (EY) mechanism and anomalous resistance increase with temperature close to the Dirac point indicates Kane-Mele (KM) SOI induced in graphene.

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Taro Wakamura, Francesco Reale, Pawel Palczynski, Sophie Guéron, Cecilia Mattevi, Hélène Bouchiat. 2017-10-20. Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS$_2$. https://doi.org/10.1103/physrevlett.120.106802

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